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Электронный компонент: SD1424

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800-900 MHz BASE STATION APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 250 x .320 4LFL (M156)
epoxy sealed
.
800 - 900 MHz
.
24 VOLTS
.
COMMON EMITTER
.
GOLD METALLIZATION
.
INTERNAL INPUT MATCHING
.
CLASS AB LINEAR OPERATION
.
P
OUT
=
30 W MIN. WITH 7.5 dB GAIN
DESCRIPTION
The SD1424 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station application.
PIN CONNECTION
BRANDING
SD1424
ORDER CODE
SD1424
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
48
V
V
CES
Collector-Emitter Voltage
45
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
4
A
P
DISS
Power Dissipation
87.5
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
C/W
SD1424
1. Collector
3. Emitter
2. Base
THERMAL DATA
October 7, 1993
rev. 1 1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
960 MHz
P
IN
=
5.3 W
V
CC
=
24 V
30
--
--
W
G
P
f
=
960 MHz
P
OUT
=
30 W
V
CC
=
24 V
7.5
--
--
dB
c
f
=
960 MHz
P
OUT
=
30 W
V
CC
=
24 V
45
50
--
%
C
OB
f
=
1 MHz
V
CB
=
24 V
(each side)
--
20
24
pF
N ote:
I
CQ
=
150mA
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
50mA
I
E
=
0mA
48
50
--
V
BV
CEO
I
C
=
20mA
I
B
=
0mA
25
30
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
4.0
--
V
I
CBO
V
CB
=
24V
I
E
=
0mA
--
--
1.0
mA
h
FE
V
CE
=
10V
I
C
=
100mA
20
--
100
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
SD1424
2/5 rev. 1
TEST CIRCUIT LAYOUT
SD1424
rev. 1 3/5
C1, C2,
C3
: 0.8 - 8pF Variable Capacitors
C4, C5,
C6, C7 : 62pF
C8
: 22
F
C9
: 180pF
C10
: 47
F, 63V
C11
: 180pF
C12
: 10
F, 63V
D1, D2 : SD1423 Devices
L1, L2 : #22 AWG with Ferrite Core
L3
: 4 Turns, #22 AWG
L4
: 2 Turns, #22 AWG
L5
: 5 Turns, #22 AWG
T1, T2 :
/4 Transformers
Material:
Epsilam 10, Er
=
10.5, Height
=
.050"
TEST CIRCUIT
SD1424
4/5 rev. 1
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0156
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1424
rev. 1 5/5