TV/LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 500 Di a .550 4L STUD (M164)
epoxy sealed
.
170 - 230 MHz
.
28 VOLTS
.
COMMON EMITTER
.
GOLD METALLIZATION
.
HIGH SATURATED POWER CAPABILITY
.
DIFFUSED EMITTER BALLAST
RESISTORS
.
P
OUT
=
20 W MIN. WITH 7.5 dB GAIN
DESCRIPTION
The SD1459 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and Band III television transmitters and trans-
posers.
PIN CONNECTION
BRANDING
SD1459
ORDER CODE
SD1459
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
16
A
P
DISS
Power Dissipation
150
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
1.2
C/W
SD1459
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
September 9, 1993
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
225 MHz
V
CE
=
28 V
I
C
=
3.5 A
20
--
--
W
G
P
f
=
225 MHz
V
CE
=
28 V
I
C
=
3.5 A
7.5
--
8.0
dB
C
OB
f
=
1 MHz
V
CB
=
30 V
--
--
150
pf
Load
Mismatch
f
=
225 MHz
V
CE
=
28 V
I
C
=
3.5 A
:1
--
--
VSWR
STATIC
Symbol
Test Conditions
Val ue
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100 mA
I
E
=
0 mA
60
--
--
V
BV
CEO
I
C
=
100 mA
I
B
=
0 mA
30
--
--
V
BV
CER
I
C
=
100 mA
R
BE
=
10
60
--
--
V
BV
EBO
I
E
=
20 mA
I
C
=
0 mA
4.0
--
--
V
h
FE
V
CE
=
5 V
I
C
=
1 A
10
--
120
--
DYNAMIC
SD1459
2/5
TYPICAL PERFORMANCE
OUTPUT POWER vs INPUT POWER
INTERMODULATION DISTORTION vs
OUTPUT POWER
THERMAL RESISTANCE vs CASE
TEMPERATURE
SAFE OPERATING AREA
SD1459
3/5
TEST CIRCUIT FOR 225 MHz
C1, C10
: 470 pF ATC 100 B Chip Capacitor
C2
: 4 - 40pF Arco 403 Trimmer Capacitor
C3
: 4 - 60pF Arco 404 Trimmer Capacitor
C4, C5
: 82pF ATC 100B Chip Capacitor
C6
: 24 - 200pF Arco 425 Trimmer Capacitor
C7
: 10 - 80pF Arco 405 Trimmer Capacitor
C8, C11
: 1
F LCC Chip Capacitor
C9
: 100
F 63V Electrolytic
C12
: 10mF LCC CPM13B
L1
: 1 1/2 Turns, 0.7mm Enameled Wire 4.5mm I.D.
L2
: 21mm 50
Line
L3
: Length of the Base Lead
L4
: Enameled Wire 1.6mm Diameter
L5
: Enameled Wire 1.6mm Diameter
L6
: 9 Turns 0.7mm Enameled Wire 4.5mm 1.D.
Material:
Epoxy 63 Mils Er
=
2.55
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
Z
IN
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
170 MHz
0.6 + j 0.7
5.9 + j 3.5
200 MHz
0.55 + j 0.8
5.0 + j 3.0
230 MHz
0.5 + j 0.9
4.2 + j 2.8
SD1459
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0164
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1459
5/5
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