HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 4LFL (M174)
epoxy sealed
.
30 MHz
.
12.5 VOLTS
.
IMD
-
30 dB
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
100 W MIN. WITH 12.0 dB GAIN
DESCRIPTION
The SD1487 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for HF
communications. This device utilizes state-of-the-
art diffused emitter ballasting to achieve extreme
ruggedness under severe operating conditions.
PIN CONNECTION
BRANDING
SD1487
ORDER CODE
SD1487
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
36
V
V
CEO
Collector-Emitter Voltage
18
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
20
A
P
DISS
Power Dissipation
290
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.6
C/W
SD1487
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
V
CE
=
12.5 V
I
CQ
=
150mA
100
--
--
W
G
P
f
=
30 MHz
V
CE
=
12.5 V
I
CQ
=
150mA
11
13
--
dB
IMD
3
*
P
OUT
=
100WPEP V
CE
=
12.5 V
I
CQ
=
150mA
--
--
-
30
dBc
C
OB
f
=
1 MHz
V
CB
=
12.5 V
--
400
--
pF
*N ote:
f
=
30 + 30.001MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100mA
I
E
=
0mA
36
--
--
V
BV
CES
I
C
=
100mA
V
BE
=
0V
36
--
--
V
BV
CEO
I
C
=
100mA
I
B
=
0mA
18
--
--
V
BV
EBO
I
E
=
20mA
I
C
=
0mA
4.0
--
--
V
I
CES
V
CE
=
15V
I
E
=
0mA
--
--
20
mA
h
FE
V
CE
=
5V
I
C
=
5A
10
--
200
--
DYNAMIC
TYPICAL PERFORMANCE
POWER GAIN & COLLECTOR
EFFICIENCY vs POWER INPUT
IMD vs POWER OUTPUT, PEP
SD1487
2/5
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
30 MHz
0.57 + j 0.78 0.80 + j 0.43
P
OUT
=
100 W PEP
V
CE
=
12.5 V
TYPICAL PERFORMANCE (cont'd)
POWER OUTPUT vs POWER INPUT
SD1487
3/5
TEST CIRCUIT
C1
: 9 - 180pF Arco 463
C2
: 5 - 380pF Arco 465
C3
: 200pF Arco 465
C4, C6 : 170pF Arco 469
C7
: 0.1
F Ceramic Disc
C5, C8 : 1000pF Unelco
C9
: 10
F Electrolytic, 35Vdc
C10
: 1000
F Electrolytic, 35Vdc
L1
: 2 1/2 Turns, #14 AWG,
I.D. Loose Wound
L2
: 16 Turns, #16 AWG, Enameled Wire on
Micrometals Torroid #T-94
L3
: Copper Strap 1/4" Widht, Length 1 1/2,
Height 1/2"
L4
: 4 Turns, #16 AWG, Enameled Wire 3/8" I.D.
L5
: 5 Turns, #18 AWG on 1/4" I.D. Coil Form
Length 1/2", Ferrite Slug
R1, R2,
R3
: 1.5 Ohm, 1 Watt Carbon
SD1487
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1487
5/5
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