TV/LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
2 x . 437 x .450 2LFL (M175)
epoxy sealed
.
470 - 860 MHz
.
28 VOLTS
.
CLASS AB PUSH PULL
.
DESIGNED FOR HIGH POWER
CAPABILITY
.
GOLD METALLIZATION
.
DIFFUSED EMITTER BALLAST
RESISTORS
.
COMMON EMITTER CONFIGURATION
.
INTERNAL INPUT MATCHING
.
P
OUT
=
150 W MIN. WITH 6.5 dB GAIN
DESCRIPTION
The SD1492 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
UHF and Band IV, V television transmitters and
transposers.
PIN CONNECTION
BRANDING
SD1492
ORDER CODE
SD1492
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
30
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Device Current
25
A
P
DISS
Power Dissipation
318
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.55
C/W
SD1492
1. Collector
3. Emitter
2. Base
THERMAL DATA
November 1992
1/7
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
*
f
=
860 MHz
V
CE
=
28 V
I
CQ
=
2 x 500 mA
150
--
--
W
P
G
*
P
OUT
=
150 W
V
CE
=
28 V
I
CQ
=
2 x 500 mA
6.5
--
--
dB
c*
P
OUT
=
150 W
V
CE
=
28 V
I
CQ
=
2 x 500 mA
45
--
--
%
C
OB
f
=
1 MHz
V
CB
=
28 V
--
--
100
pF
N ote:
* 1 dB Compressi on Poi nt
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100mA
I
E
=
0mA
60
--
--
V
BV
CEO
I
C
=
100mA
I
B
=
0mA
30
--
--
V
BV
EBO
I
E
=
50mA
I
C
=
0mA
3.0
--
--
V
I
CES
V
CE
=
28V
I
E
=
0mA
--
--
10
mA
h
FE
V
CE
=
5V
I
C
=
3A
15
--
70
--
DYNAMIC
SD1492
2/7
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
INTERMODULATION DISTORTION vs POWER
OUTPUT
THERMAL RESISTANCE vs CASE TEMPERATURE
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
SAFE OPERATING AREA
COLLECTOR EFFICIENCY vs FREQUENCY
BROADBAND POWER GAIN vs FREQUENCY
SD1492
3/7
Z
CL
Z
IN
470 MHz
470 MHz
900 MHz
550 MHz
650 MHz
700 MHz
860 MHz
700 MHz
860 MHz
900 MHz
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
900 MHz
2.65 + j 0.8
2.4
-
j 1.6
860 MHz
3.2 + j 1.6
2.3
-
j 0.9
700 MHz
2.0 + j 2.4
1.5
-
j 0.8
650 MHz
1.0 + j 1.3
--
550 MHz
0.6 + j 0.4
--
470 MHz
0.3
-
j 1.2
1.2
-
j 1.3
SD1492
4/7
PHOTOMASTER OF TEST CIRCUIT
B1, B2 : Coaxial Cable 25, 43mm
C1, C2
C6, C7 : 330pF, ATC 100B
C3
: .8 - 8pF Johanson Gigatrim
C4
: 4.7pF + 3.9pF, ATC 100B
C5
: 3.9pF + 1.7pF, ATC 100B + .8 - 8pF Johanson
Gigatrim
C8
: 120pF, ATC 100B
C9
: 1.5nF, ATC 100B
C10
: 10nF + 47
F, 63V
C11
: 1.5nF, ATC 100B + 10nF
C12
: 470pF + 1.5nF, ATC 100B + 100
F, 63V
Substrate: Teflon Glass Er
=
2.55, 30Mils
L1, L18
: Printed Line 50
L2, L17
: Printed Line 26.7
, 10mm
L3, L16
: Printed Line 60
, 10.5mm
L4, L15
: Printed Line 50
, 43mm
L5
: Printed Line 25
, 13.5mm
L6
: Printed Line 21
, 15mm
L7
: Printed Line 10.5
, 12.5mm
L8
: Printed Line 8
, 7.5mm
L9, l10
: Printed Line 50
, 10mm
L11
: Printed Line 9.5
, 10.5mm
L12
: Printed Line 11
, 14.5mm
L13
: Printed Line 15.5
, 8.5mm
L14
: Printed Line 19
, 3.5mm
L19
: 2 Turns, #16 AWG
L20
: 8 Turns, #16 AWG
L21, L22 : 12 Turns, #22 AWG
TEST CIRCUIT
SD1492
5/7
C15
: 10nF + 100nF + 10
F
C16
: 10nF
C17
: 1
F
C18
: 1.2nF + 27nF + 10
F
D1
: AAY 49 Ge Diode Thermally Connected with Q3 heatsink
D2
: 1N 400S - Si Diode Thermally Connected with Q3 heatsink
D3
: 1n 400S - Si Diode Thenmally Connected with SD1492 (RF Transistors) Flange
L6, L9 : Ferrite Choice
Q
: Box 63B
R6
: 100
Trimpot
R7
: 470
, 1/2W
BIAS VOLTAGE SOURCE
SD1492
6/7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0175 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SD1492
7/7
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