AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 SQ. 2LFL (M103)
epoxy sealed
DESCRIPTION
The SD1538-02 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1538-02 is pack-
aged in a metal/ceramic package with internal
input/output matching resulting in improved broad-
band performance and a low thermal resistance.
PIN CONNECTION
BRANDING
SD1538-2
ORDER CODE
SD1538-02
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
11.0
A
P
DISS
Power Dissipation
583
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.30
C/W
SD1538-02
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
200 WATTS (typ.) IFF 1030 - 1090 MHz
.
150 WATTS (min.) DME 1025 - 1150 MHz
.
140 WATTS (typ.) TACAN 960 - 1215 MHz
.
7.8 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150MHz P
IN
=
25.0 W
V
CE
=
50 V
150
--
--
W
G
P
f
=
1025 -- 1150MHz P
IN
=
25.0 W
V
CE
=
50 V
7.8
--
--
dB
N ote:
Pulse W idth
=
10
Sec, Duty Cycle
=
1%
This device i s sui table f or use under other pulse widt h/duty cycle condit ions.
Please contact the fact ory for specific appli cat ions assi stance.
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
10mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
25mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
5mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
10
mA
h
FE
V
CE
=
5V
I
C
=
300mA
5
--
--
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
SD1538-02
2/5
C1, C2 : .6 - 4.5pF Gigatrim
C3
: .100 x .100 120pF Chip Capacitor
C4
: .100 x .100 470pF Chip Capacitor
C5
: 100mF Electrolytic
L1
: #20 AWG
L2
: 3 Turns, #20 AWG Wound on #32 Drill Bit
Z1
: .195 x .415
Z2
: .685 x .230
Z3
: .080 x .105
Z4
: .845 x .345
Z5
: .640 x .470
Z6
: .070 x .405
Z7
: .740 x .180
Z8
: .50 x .325
TEST CIRCUIT AND PC BOARD LAYOUT
SD1538-02
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0103
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD1538-02
5/5
PDF 
ZIP