AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .500 2LFL (M112)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
.
400 (min.) DME 1025 - 1150 MHz
.
6.5 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFICIED OPERATING CONDITIONS
.
INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
DESCRIPTION
The SD1541-01 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1541-
01 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ce-
ramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
PIN CONNECTION
BRANDING
SD1541-1
ORDER CODE
SD1541-01
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
22
A
P
DISS
Power Dissipation
1458
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.12
C/W
SD1541-01
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150MHz P
IN
=
90 W
V
CE
=
50 V
400
--
--
W
G
P
f
=
1025 -- 1150MHz P
IN
=
90 W
V
CE
=
50 V
6.5
--
--
dB
N ote:
Pulse W idth
=
10
Sec, Duty Cycle
=
1%
This device i s sui table f or use under other pulse widt h/duty cycle condit ions.
Please contact the fact ory for specific appli cat ions assi stance.
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
25mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
50mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
25
mA
h
FE
V
CE
=
5V
I
C
=
.25A
5
--
200
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
SD1541-01
2/5
TEST CIRCUIT
All Dimensions in Inches Unless Otherwise specified
C1
: 0.4 - 2.5pF Johanson Gigatrim
C2, C3,
C4
: 0.6 - 4.5pF Johanson Gigatrim
C5
: 82pF Chip Capacitor, .055 Sq.
L1
: Loop, #18 Tinned, .36 Wide x .27 above Circuit
L2
: 4 3/4 Turns, #24 En., C.W., .075 I.D.
Z1
: 50
(.02 Wide)
Z2
: .250 x .120
Z3
: 50
.020 x .330; C1 tapped .15 from Load
Z4
: .145 x .920
Z5
: .325 x .180
Z6
: .730 x .315
Z7
: .710 x .425 with .140 x .150 cutout
Z8
: .35 x .780; C4 Tapped .36 from Cen
Z9
: 50
C1, C4 : Cold End Terminated Through Eyelet.
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
1020 MHz
2.898 + j 4.1
1.382
-
j 3.2
1090 MHz
2.325 + j 3.4
1.338
-
j 2.8
1150 MHz
1.994 + j 2.8
1.269
-
j 2.5
SD1541-01
3/5
PC BOARD LAYOUT
SD1541-01
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1541-01
5/5
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