AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (M112)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
.
600 WATTS (typ.) IFF 1030/1090 MHz
.
550 WATTS (min.) DME 1025 - 1150 MHz
.
5.6 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILITY AND
RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INTERNAL INPUT/OUTPUT MATCHED,
COMMON BASE CONFIGURATION
DESCRIPTION
The SD1542 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The
SD1542 is designed for applications requiring high
peak power and low duty cycles such as IFF and
DME. The SD1542 is packaged in a hermetic met-
al/ceramic package with internal input/output
matching, resulting in improved broadband per-
formance and a low thermal resistance.
PIN CONNECTION
BRANDING
SD1542
ORDER CODE
SD1542
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
40
A
P
DISS
Power Dissipation
1350
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +200
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.06
C/W
SD1542
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1025 -- 1150MHz P
IN
=
150 W
V
CE
=
50 V
550
--
--
W
G
P
f
=
1025 -- 1150MHz P
IN
=
150 W
V
CE
=
50 V
5.6
--
--
dB
Note:
Pulse Width
=
10
Sec, Duty Cycle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
25mA
I
E
=
0mA
65
--
--
V
BV
CES
I
C
=
50mA
V
BE
=
0V
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
35
mA
h
FE
V
CE
=
5V
I
C
=
.25A
5
--
200
--
DYNAMIC
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
FREQ.
Z
IN
(
)
Z
CL
(
)
1020 MHz
1.78 + j 3.0
1.33
-
j 2.7
1090 MHz
1.57 + j 2.1
1.64
-
j 3.4
1150 MHz
1.55 + j 1.4
1.93
-
j 4.0
P
IN
=
150 W
V
CE
=
50 V
SD1542
2/4
PC BOARD LAYOUT
All Dimensions are in inches Unless Otherwise Specified
C1
: 0.4 - 2.5pF Johanson Gigatrim
C2, C3,
C4
: 0.6 - 4.5pF Johanson Gigatrim
C5
: 82pF Chip Capacitor, .055 Sq.
C6
: Pair of 820pF Chip Capacitors, .11 Sq.
C7
: 1000
F Electrolytic
L1
: Loop, #18 Tinned, .36 Wide x .27 Above Circuit
L2
: 4 3/4 Turns, #24 Enameled, Close
Wound, .075 I.D.
Z1
: 50
(.02 Wide)
Z2
: .250 x .120
Z3
: 50
, .020 x .330; C1 Tapped .15 From Load
Z4
: .145 x .920
Z5
: .325 x .180
Z6
: .730 x .315
Z7
: .710 x .425 with .140 x .150 Cutout
Z8
: .035 x .780; C4 Tapped .36 from Center
Z9
: 50
(.02 Wide)
C1, C4 : Cold End Terminated Through Eyelet
TEST CIRCUIT
SD1542
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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SD1542
4/4
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