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Электронный компонент: SD1542-04

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AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (M112)
hermetically sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF
.
600 WATTS (min.) IFF 1030/1090 MHz
.
REFRACTORY GOLD METALLIZATION
.
6.0 dB MIN. GAIN
.
BALLASTING AND LOW THERMAL
REISTANCE FOR RELIABILITY AND
RUGGEDNESS
.
30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1542-04 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1542-
04 is designed for applications requiring high peak
power and low duty cycles such as IFF. The
SD1542-04 is packaged in a hermetic metal/ce-
ramic package with internal input matching, re-
sulting in improved broadband performance and
low thermal reistance.
PIN CONNECTION
BRANDING
SD1542-4
ORDER CODE
SD1542-04
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
40
A
P
DISS
Power Dissipation
1350
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.06
C/W
SD1542-04
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
November 1992
1/5
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
1090 MHz
P
IN
=
150 W
V
CE
=
50 V
600
--
--
W
G
P
f
=
1090 MHz
P
IN
=
150 W
V
CE
=
50 V
6.0
--
--
dB
Note:
Pulse Width
=
10
Sec, Duty Cyle
=
1%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
25mA
I
E
=
0mA
65
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
3.5
--
--
V
I
CES
V
CE
=
50V
I
E
=
0mA
--
--
35
mA
h
FE
V
CE
=
5V
I
C
=
1A
5
--
200
--
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
SD1542-04
2/5
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
IMPEDANCE DATA
SD1542-04
3/5
TEST CIRCUIT
C1, C2,
C3
: .8 - 4.8pF Gigatrim
C4
: 120pF Chip Capacitor
C5
: 680pF Chip Capacitor
C6
: 1000
F 63Vdc Electrolytic
C7
: 56pF Chip Capacitor
L1
: 100mils Wide Brass Strip
L2
: #18 AWG Wire
Z1
: 510 mils x 20mils
Z2
: 120mils x 380mils
Z3
: 210mils x 20mils
Z4
: 270mils x 725mils
Z5
: 400mils x 720mils
Z6
: 340mils x 20 mils
Z7
: 245mils x 20 mils
CIRCUIT BOARD LAYOUT
SD1542-04
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1542-04
5/5