UHF PULSED APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 x .400 2LFL (M106)
hermetically sealed
.
350 WATTS @ 10
SEC PULSE WIDTH,
10% DUTY CYCLE
.
300 WATTS @ 250
SEC PULSE WIDTH,
10% DUTY CYCLE
.
9.5 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
DESCRIPTION
The SD1563 is a gold metallized silicon NPN pulse
power transistor. The SD1563 is designed for ap-
plications requiring high peak power and low duty
cycles within the frequency range of 400 - 500
MHz.
PIN CONNECTION
BRANDING
SD1563
ORDER CODE
SD1563
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
65
V
V
CES
Collector-Emitter Voltage
65
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
21.6
A
P
DISS
Power Dissipation
875
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.2
C/W
SD1563
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
September 7, 1994
1/7
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
425 MHz
P
IN
=
33.5 W
V
CE
=
40 V
300
--
--
W
P
G
f
=
425 MHz
P
OUT
=
300 W
V
CE
=
40 V
9.5
--
--
dB
c
f
=
425 MHz
P
IN
=
25 W
V
CE
=
40 V
55
--
--
%
N ote:
Pulse W idth
=
250
Sec, Dut y Cyle
=
10%
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
50 mA
I
E
=
0 mA
65
--
--
V
BV
CES
I
C
=
50 mA
V
BE
=
0 V
65
--
--
V
BV
CEO
I
C
=
50 mA
I
B
=
0 mA
28
--
--
V
BV
EBO
I
E
=
10 mA
I
C
=
0 mA
3.5
--
--
V
I
CES
V
CE
=
30 V
I
E
=
0 mA
--
--
7.5
mA
h
FE
V
CE
=
5 V
I
C
=
5 A
10
--
100
--
DYNAMIC
TYPICAL PERFORMANCE
P
OUT
(W)
P.W. (
Sec)
D.C. (%)
T
J
(
C max.)
V
CC
360
10
10
150
40
350
20
10
150
40
325
100
10
150
40
310
500
10
150
40
300
1000
10
150
40
SD1563
2/7
TYPICAL PERFORMANCE (P.W.
=
120
Sec)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
POWER OUTPUT vs COLLECTOR VOLTAGE
EFFICIENCY vs POWER INPUT
SD1563
3/7
IMPEDANCE DATA (P.W.
=
120
Sec)
TYPICAL PERFORMANCE (P.W.
=
120
Sec)
EFFICIENCY vs FREQUENCY
EFFICIENCY vs COLLECTOR VOLTAGE
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
SD1563
4/7
TYPICAL PERFORMANCE (P.W.
=
250
Sec)
POWER GAIN vs FREQUENCY
EFFICIENCY vs FREQUENCY
POWER OUTPUT vs FLANGE
T
J
@ CONSTANT 125
C
THERMAL RESISTANCE vs PULSE
WIDTH
SD1563
5/7
IMPEDANCE DATA (P.W.
=
250
Sec)
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
SD1563
6/7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0106 rev. B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SD1563
7/7
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