HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.500 4LFL (M164)
epoxy sealed
.
OPTIMIZED FOR SSB
.
30 MHz
.
50 VOLTS
.
IMD
-
30 dB
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
150 W PEP MIN. WITH 14 dB GAIN
DESCRIPTION
The SD1727 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communica-
tions. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe oper-
ating conditions.
PIN CONNECTION
BRANDING
THX15
ORDER CODE
SD1727
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
110
V
V
CEO
Collector-Emitter Voltage
55
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
10
A
P
DISS
Power Dissipation
233
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
0.75
C/W
SD1727 (THX15)
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/7
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
V
CE
=
50 V
I
CQ
=
100mA
150
--
--
W
G
P
*
P
OUT
=
150 W PEP
V
CE
=
50 V
I
CQ
=
100mA
14
--
--
dB
IMD*
P
OUT
=
150 W PEP
V
CE
=
50 V
I
CQ
=
100mA
--
--
-
30
dBc
c*
P
OUT
=
150 W PEP
V
CE
=
50 V
I
CQ
=
100mA
37
--
--
%
C
OB
f
=
1 MHz
V
CB
=
50 V
--
--
220
pF
Note:
The SD1727 is also usable in Class A at 40 V. Typical performance is:
P
OUT
=
30 W PEP, G
P
=
14 dB, IMD
= -
40dBc
* f
1
=
30.00 MHz; f
2
=
30.001 MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100mA
I
E
=
0mA
110
--
--
V
BV
CES
I
C
=
100mA
V
BE
=
0V
110
--
--
V
BV
CEO
I
C
=
100mA
I
B
=
0mA
55
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
4.0
--
--
V
I
CEO
V
CE
=
30V
I
E
=
0mA
--
--
5
mA
I
CES
V
CE
=
60V
I
E
=
0mA
--
--
5
mA
h
FE
V
CE
=
6V
I
C
=
1.4A
18
--
43.5
--
DYNAMIC
SD1727 (THX15)
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TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
OUTPUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT PEP
SD1727 (THX15)
3/7
POWER GAIN vs FREQUENCY
POWER GAIN vs POWER OUTPUT PEP
SAFE OPERATING AREA
TYPICAL PERFORMANCE (cont'd)
SD1727 (THX15)
4/7
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCE
BIAS CRCUIT
SD1727 (THX15)
5/7
C1
: Arco 427
C2
: Arco 4611
C3
: Arco 4615
C4
: 220pF
C5, C6
: Arco 4215
C7
: Arco 426
C8, C12
: 100nF 63V
C9, C11
C15
: 1nF
C10
: 470
F 40V
C13
: 220
F 63V
C14
: 10nF
L1
: 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm
L2
: Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick
L3
: 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm
L4
: 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm
L5
: 4 Turns Diameter 12mm, 2mm Wire, Length 25mm
L6, L7
L8
: Choke
R
: 0.6
TEST CIRCUIT - CLASS AB - 30 MHz
MOUNTING CIRCUIT - CLASS AB - 30MHz
SD1727 (THX15)
6/7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0164
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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SD1727 (THX15)
7/7
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