HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.380 4L STUD (M135)
epoxy sealed
.
OPTIMIZED FOR SSB
.
30 MHz
.
50 VOLTS
.
COMMON EMITTER
.
GOLD METALLIZATION
.
P
OUT
=
75 W MIN. WITH 14.0 dB GAIN
DESCRIPTION
The SD1733 is a 50 V Class AB epitaxial silicon
NPN planar transistor designed primarily for SSB
and VHF communications. This device utilizes
emitter ballasting for improved ruggedness and
reliability.
PIN CONNECTION
BRANDING
TH513
ORDER CODE
SD1733
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
110
V
V
CEO
Collector-Emitter Voltage
55
V
V
EBO
Emitter-Base Voltage
4.0
V
I
C
Device Current
3.25
A
P
DISS
Power Dissipation
127
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
C/W
SD1733 (TH513)
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
30 MHz
V
CE
=
50 V
75
--
--
W
G
P
*
P
OUT
=
75 W PEP
V
CE
=
50 V
14
--
--
dB
IMD*
P
OUT
=
75 W PEP
V
CE
=
50 V
--
--
-
30
dBc
c*
P
OUT
=
75 W PEP
V
CE
=
50 V
37
--
--
%
C
OB
f
=
1 MHz
V
CB
=
50 V
--
--
100
pF
N ote:
* f
1
=
30.00 MHz, f
2
=
30. 001 MHz
STATIC
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CES
I
C
=
100mA
V
BE
=
0V
110
--
--
V
BV
CEO
I
C
=
200mA
I
B
=
0mA
55
--
--
V
BV
EBO
I
E
=
10mA
I
C
=
0mA
4.0
--
--
V
h
FE
V
CE
=
6V
I
C
=
1.4A
19
--
50
--
DYNAMIC
SD1733 (TH513)
2/4
TEST CIRCUIT
C1
: 20 - 500pF
C2
: 50 - 500pF
C3, C4 : 3.9nF
C5
: 100nF
C6
: 2.2
F
C7
: 56pF
C9
: 100pF
C10
: 20 - 150pF
C11
: 20 - 500pF
L1
: 3 Turns, Diameter Wire 1.5mm, Int. Diameter 7mm,
Pitch 2.5mm
L2
: 22
H Choke Coil
L3
: 4 Turns, Diameter Wire 1.5mm, Int. Diameter 10mm,
Pitch 2.5mm
L4
: Ferroxcube Choke Coil
L5
: 7 Turns, Diameter Wire 1.5mm, Int. Diameter 12mm,
Pitch 2.5mm
R2
: 33
R3
: 4.7
BIAS CIRCUIT
SD1733 (TH513)
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0135
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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SD1733 (TH513)
4/4
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