SD2902
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
GOLD METALLIZATION
s
COMMON SOURCE CONFIGURATION
s
2 - 500 MHz
s
15 WATTS
s
28 VOLTS
s
12.5 dB MIN. AT 400 MHz
s
CLASS A OR AB OPERATION
s
EXCELLENT THERMAL STABILITY
DESCRIPTION
The SD2902 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Volt age
65
V
V
DGR
Drain-Gate Voltage (R
G S
= 1M
)
65
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
2.5
A
P
DI SS
Power Dissipat ion
58. 3
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junct ion-Case T hermal Resistance
Case-Heatsink T hermal Resist ance
3.0
0.30
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M113
epoxy sealed
ORDER CODE
BRANDING
SD2902
SD2902
1. Drain
3.Gate
2. Source
4. Source
1/8
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 15 mA
65
V
I
DSS
V
G S
= 0V
V
DS
= 28 V
1.5
mA
I
GSS
V
G S
= 20V
V
DS
= 0 V
1.0
A
V
GS(Q)
V
DS
= 10V
I
D
= 30 mA
1. 0
6.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 1. 5 A
1.6
V
g
FS
V
DS
= 10V
I
D
= 1.5 A
0. 6
mho
C
ISS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
23
pF
C
OSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
18
pF
C
RSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
3.5
pF
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 400 MHz
V
DD
= 28 V
I
DQ
= 25 mA
15
W
G
PS
f = 400 MHz
V
DD
= 28 V
P
out
= 15 W
I
DQ
= 25 mA
12. 5
13. 5
dB
D
f = 400 MHz
V
DD
= 28 V
P
out
= 15 W
I
DQ
= 25 mA
45
55
%
Load
Mismatch
f = 400 MHz
V
DD
= 28 V
P
out
= 15 W
I
DQ
= 25 mA
All Angles
10: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
400 MHz
2.6 - j 6.5
7. 8 + j 10
REF. 1021308K
SD2902
2/8
Capacitance vs Drain-Source Voltage
0
10
20
30
1
10
100
VDS. DRAIN-SOURCE VOLTAGE (VOLTS)
C,
CAPACITANCES
(pF)
Ciss
Crss
Coss
f = 1 MHz
GC82930
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
25
45
65
85
2.8
3.2
3.6
Tc, CASE TEMPERATURE (C)
RTH(j-c)
(C/W)
GC82 94 0
Gate-Source Voltages vs Case Temperature
-25
0
25
50
75
100
0. 9
0.9 5
1
1.0 5
Tc, C ASE TEMPERATURE (C)
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED)
VDD = 10V
GC82960
ID = 500 mA
ID = 2 A
ID = 25 mA
ID = 1.25 A
ID =3 A
5
6
7
8
9
10
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (VOLTS)
ID,
DRAIN
CURRENT
(A)
VDS = 10V
T = 25
C
T = 80
C
GC82950
T = - 20
C
TYPICAL PERFORMANCE
SD2902
3/8
13
16
18
21
23
26
28
0
5
10
15
20
25
VDD, SUPPLY VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(WATTS)
Pin = 1. 6 W
Pin = .8 W
Pin = .4 W
ID Q = 25 m A
f = 400 MHz
GC82990
Output Power vs Input Power
0.1
0.4
0.7
1
1.3
1.6
0
5
10
15
20
25
Pin, INPUT POWER (W)
Pout,
OUTPUT
POWER
(W)
Vdd = 28 V
Vdd = 13. 5 V
Tc= 25
C
f = 400 MHz
ID Q = 25 mA
GC82970
Output Power vs Input Power
0.1
0.4
0.7
1
1.3
1.6
0
5
10
15
20
25
30
Pin, INPUT POW ER (W)
Pout,
OUTPUT
POWER
(W)
T = -20C
T = 25 C
T = 80C
I DQ = 25 m A
VDD = 28 V
f = 400 MHz
GC83000
Output Power vs Voltage Supply
Output Power vs Gate Voltage
-1
0
1
2
3
4
5
6
7
0
5
10
15
20
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(W)
VDD = 28 V
ID Q = 25 mA
f = 400 MHz
Pin = Constant
T = 80
C
T = -20
C
T = 25
C
GC82980
Power Gain vs Output Power
0
5
10
15
20
25
11
12
13
14
15
Pout, OUTPUT POWER (W)
PG,
POWER
GAIN
(dB)
Tc= 25
C
f = 400 MHz
ID Q = 25 m A
GC83010
Efficiency vs Output Power
0
5
10
15
20
25
20
30
40
50
60
70
Pout, OUTPUT POWER (W)
EFFICIENCY
(%)
Tc= 25
C
f = 400 MHz
ID Q = 25 mA
GC83020
TYPICAL PERFORMANCE
SD2902
4/8
400 MHz Test Circuit Schematic
400 MHz Test Circuit Component Part List
SD2902
5/8
PDF 
ZIP