SD2903
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
GOLD METALLIZATION
s
2 - 500 MHz
s
30 WATTS
s
28 VOLTS
s
13 dB MIN. AT 400 MHz
s
CLASS A OR AB OPERATION
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION,
PUSH-PULL
DESCRIPTION
The SD2903 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 28 V DC large signal applications up to
500 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
65
V
V
DGR
Drain-Gate Voltage
(RG S = 1 M
)
65
V
V
G S
Gat e-Source Volt age
20
V
I
D
Drain Current
5
A
P
DI SS
Power Dissipation
100
W
T
j
Max. O perating Junction Temperature
200
o
C
T
STG
Storage T emperat ure
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resist ance
1.75
0.40
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M229
(epoxy sealed)
ORDER CODE
BRANDING
SD2903
SD2903
1. Drain
4.Gate
2. Drain
5.Gate
3. Source
1/8
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC (Per Section)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 15 mA
65
V
I
DSS
V
G S
= 0V
V
DS
= 28 V
1.5
mA
I
GSS
V
G S
= 20V
V
DS
= 0 V
1.0
A
V
GS(Q)
V
DS
= 10V
I
D
= 30 mA
1. 0
6.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 1.5 A
1.6
V
g
FS
V
DS
= 10V
I
D
= 1.5 A
0. 6
mho
C
ISS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
23
pF
C
OSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
18
pF
C
RSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
3.5
pF
DYNAMIC (Total Device)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 400 MHz
V
DD
= 28 V
I
DQ
= 100 mA
30
W
G
PS
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 100 mA
13
15
dB
D
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 100 mA
45
50
%
Load
Mismatch
f = 400 MHz
V
DD
= 28 V
P
out
= 30 W
I
DQ
= 100 mA
All Angles
5: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
400 MHz
4. 6 - j 12
13. 6 + j 10
REF. 1021309H
Measured Gate to Gate and Drain to Drain, Respectively.
SD2903
2/8
Capacitance vs Drain-Source Voltage
0
10
20
30
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
C,
CAPACITANCES
(pF)
Ciss
Crss
Coss
f = 1 MHz
GC83770
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
25
45
65
85
1.7
1.9
2.1
Tc, CASE TEMPERATURE (C)
RTH(j-c)
(C/W)
GC83780
Gate-Source Voltages vs Case Temperature
-25
0
25
50
75
100
0.9
0.95
1
1.05
Tc, CASE TEMPERATURE (C)
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED)
VDD= 10V
ID = 3A
ID = 500 mA
ID = 2 A
ID = 25 mA
I D = 1.25 A
GC83800
5
6
7
8
9
10
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (VOLTS)
ID,
DRAIN
CURRENT
(A)
VDS = 10V
T = 25
C
T = 80
C
T = -20
C
GC83790
TYPICAL PERFORMANCE
SD2903
3/8
13
18
23
28
0
10
20
30
40
VDD, SUPPLY VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(WATTS)
Pin = 1.2 W
Pin = .6 W
Pin = .3 W
IDQ = 100 mA
f = 400 MHz
GC83830
Output Power vs Input Power
0.05
0.45
0.85
1.25
0
10
20
30
40
Pin, INPUT POWER (W)
Pout,
OUTPUT
POWER
(W)
Vdd = 28 V
Vdd = 13.5 V
Tc=25
C
f = 400 MHz
IDQ = 100 mA
GC83810
Output Power vs Input Power
0.05
0.45
0.85
1.25
0
10
20
30
40
50
Pin, INPUT POWER (W)
Pout,
OUTPUT
POWER
(W)
T = -20
C
T = 25
C
T =80
C
IDQ = 100 mA
VDD = 28 V
f = 400 MHz
GC83820
Output Power vs Voltage Supply
Output Power vs Gate Voltage
3
4
5
6
7
0
10
20
30
40
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Pout,
OUTPUT
POWER
(WATTS)
VDD = 28V
IDQ = 100mA
f = 400MHz
Pin = Constant
GC83840
T = 25 C
T = 80 C
T =-20 C
Power Gain vs Output Power
0
10
20
30
40
14
16
18
20
Pout, OUTPUT POWER (W)
PG,
POWER
GAIN
(dB)
Tc = 25
C
f = 400 MHz
IDQ = 100 mA
GC83850
Efficiency vs Output Power
0
10
20
30
40
10
20
30
40
50
60
Pout, OUTPUT POWER (W)
EFFICIENCY
(%)
Tc= 25
C
f = 400 MHz
IDQ = 100 mA
GC83860
TYPICAL PERFORMANCE
SD2903
4/8
400 MHz Test Circuit Schematic
400 MHz Test Circuit Component Part List
SD2903
5/8
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