SD2918
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
ADVANCE DATA
s
GOLD METALLIZATION
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION
s
P
out
= 30 W MIN. WITH 18 dB GAIN @ 30
MHz
DESCRIPTION
The SD2918 is a gold metallized N-Channel MOS
field-effect RF power transistor. It is intended for
use in 50 V DC large signal applications up to
200 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
125
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M
)
125
V
V
G S
Gat e-Source Volt age
20
V
I
D
Drain Current
6
A
P
DI SS
Power Dissipation
175
W
T
j
Max. O perating Junction Temperature
200
o
C
T
STG
Storage T emperat ure
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resist ance
1.0
0.30
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M113
epoxy sealed
ORDER CODE
BRANDING
SD2918
TSD2918
1. Drain
3.Gate
2. Source
4. Source
1/8
Capacitance vs Drain-Source Voltage
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
Gate-Source Voltages vs Case Temperature
TYPICAL PERFORMANCE
SD2918
3/8
Output Power vs Input Power
Output Power vs Input Power
Output Power vs Voltage Supply
Output Power vs Gate Voltage
Power Gain & Efficiency vs Output Power
TYPICAL PERFORMANCE
SD2918
4/8
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