SD2921
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
s
GOLD METALLIZATION
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION
s
POUT = 150W MIN. WITH 12.5 dB gain @175
MHz
DESCRIPTION
The SD2921 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2921 is
intended
for
use
in
50V
dc
large signal
applications up to 200 MHz
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Volt age
125
V
V
DGR
Drain-Gate Voltage (R
G S
= 1M
)
125
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
16
A
P
DI SS
Power Dissipat ion
292
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
R
th(c -s)
Junct ion-Case T hermal Resistance
Case-Heatsink T hermal Resist ance
0.6
0.2
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M174
epoxy sealed
ORDER CODE
BRANDING
SD2921
SD2921
1. Drain
3.Gate
2. Source
4. Source
1/10
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 100 mA
125
V
I
DSS
V
G S
= 0V
V
DS
= 50 V
5
mA
I
GSS
V
G S
= 20V
V
DS
= 0 V
5
A
V
GS(Q)
V
DS
= 10V
I
D
= 250 mA
1. 0
5.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 10 A
3.0
V
G
FS
V
DS
= 10V
I
D
= 5 A
4
mho
C
ISS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
411
pF
C
OSS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
198
pF
C
RSS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
27
pF
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 175 MHz
V
DD
= 50 V
I
DQ
= 250 mA
150
W
G
PS
f = 175 MHz
V
DD
= 50 V
P
ou t
= 150 W
I
DQ
= 250 mA
12. 5
14
dB
D
f = 175 MHz
V
DD
= 50 V
P
ou t
= 150 W
I
DQ
= 250 mA
55
65
%
Load
Mismatch
f = 175 MHz
V
DD
= 50 V
P
ou t
= 150 W
I
DQ
= 250 mA
All Phase Angles
10: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
30 MHz
1.7 - j 5.7
6. 8 + j 0.9
175 MHz
1.2 - j 2.0
2. 0 + j 2.4
REF. 1021304K
SD2921
2/10
Output Power vs Input Power
1
4
7
10
13
16
19
Pin, INPUT POWER (W)
0
50
100
150
200
250
Pout,
OUTPUT
POWER
(W)
Vdd = 50V
Vdd = 40V
Tc = 25
C
f = 175 MHz
IDQ = 250mA
Output Power vs Supply Voltage
Capacitance vs Drain-Source Voltage
10
100
1000
10000
VDS,DRAIN-SOURCE VOLTAGE (VOLTS)
C,
CAPACITANCE
(pF)
0
10
20
30
40
50
Ciss
Coss
Crss
Output Power vs Input Power
1
3
5
7
9
11
13
15
17
19
Pin, INPUT POWER (W)
0
50
100
150
200
250
300
Pout,
OUTPUT
POWER
(W)
Tcase = -20
C
IDQ = 250 mA
VDD = 50V
f = 175MHz
Tcase = 25
C
Tcase = 80
C
Output Power vs Gate Voltage
-3
-2
-1
0
1
2
3
VGS, GATE-SOURCE VOLTAGE (VOLTS)
0
50
100
150
200
Pout,
OUTPUT
POWER
(W)
VDD = 50V
IDQ = 250mA
f = 175MHz
Pin = Constant
T = -20
C
T = 25
C
T = 80
C
Drain Current vs Gate Voltage
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE -SOURC E VOLTAGE (VOLTS )
0
5
10
15
ID,
DRAIN
CURRENT
(A)
VDS = 10V
T = -20
C
T = 25
C
T = 80
C
24
28
32
36
40
44
48
VDD, SUPPLY VOLTAGE (VOLTS)
0
50
100
150
200
Pout,
OUTPUT
POWER
(WATTS)
Pin = 9W
IDQ = 250mA
f = 175MHz
Pin = 6W
Pin = 3W
TYPICAL PERFORMANCE
SD2921
3/10
0
50
100
150
200
24.5
25
25.5
26
26.5
Pout, OUTPUT POWER (W)
PG,
POWER
GAIN
(dB)
f =30 MHz
VDD= 50 V
IDQ= 250 mA
SC13170
Gate-Source Voltages vs Case Temperature
-25
0
25
50
75
100
Tc, CASE TEMPERATURE (
C)
0.85
0.9
0.95
1
1.05
1.1
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED
VDS = 10V
Id = 5A
Id = 4A
Id = 2A
Id = . 25A
Id = 1A
Id = .1A
Output Power vs Gate Voltage
0
50
100
150
200
VGS GATE-SOURCE VOLTAGE (V)
Pout,
OUTPUT
POWER
(W)
0
1
2
3
4
5
6
VDD= 50 V
IDQ= 250 m A
f = 30MHz
FixedPin
SC 13 21 0
Tfl= -2 0
C
Tfl= 25
C
Tfl= 80
C
Power Gain vs Output Power
Output Power vs Input Power
0
50
100
150
200
250
Pi n, INPUT POWER (W)
Pout,
OUTPUT
POWER(W)
0.02
0.1
0.18
0.26
0.34
0.42
0.5
0.58
0.66
VDD= 50 V
SC13180
f = 30 MHz
IDQ= 250 m A
VDD= 40 V
Efficiency vs Output Power
0
50
100
150
200
0
20
40
60
Pout, OUTPUTPOWER (W)
Efficiency(%)
f= 30MHz
VDD= 50 V
IDQ= 250 mA
SC13190
Output Power vs Voltage Supply
0
50
100
150
200
VDD, SU PPLY VOLTAGE (V)
Pout,
OUTPUT
POWER
(W)
24
28
32
36
40
44
48
f = 30 MHz
IDQ= 250 mA
Pin= 0.6W
Pin= 0.2W
SC1 32 00
Pin= 0.4W
TYPICAL PERFORMANCE
SD2921
4/10
Maximum Thermal Resistance vs Case
Temperature
25
45
65
85
Tc, CASE TEMPERATURE (C)
0.55
0.6
0.65
0.7
0.75
RTH(j-c)
(C/W)
DC Safe Operating Area
1
2
5
10
20
50
100
200
1
2
3
5
10
20
30
50
100
Vds(V)
Ids(A)
(1
)
(1) Current in this area may be limited by Rds(on)
SD2921
5/10
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