SD2932
RF POWER TRANSISTORS
HF/VHF/UHF N-CHANNEL MOSFETs
PRELIMINARY DATA
GOLD METALLIZATION
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
POUT = 300W MIN. WITH 15 dB GAIN @175
MHz
DESCRIPTION
The SD2932 is a gold metallized N-Channel MOS
field-effect RF power transistor. The SD2932 is
intended
for
use
in
50V
dc
large signal
applications up to 250 MHz
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
125
V
V
DGR
Drain-Gat e Voltage (R
GS
= 1M
)
125
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
40
A
P
DI SS
Power Dissipation
500
W
T
j
Max. O perat ing Junction Temperature
+200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
Junct ion-Case Thermal Resistance
0.35
o
C/ W
R
th(c -s)
Case Heatsink Thermal Resistance
0.12
o
C/ W
Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M244
epoxy sealed
ORDER CODE
BRANDING
SD2932
TSD2932
1. Drain
3. Source
2. Gate
1/13
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC (per section)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0 V
I
DS
= 100 mA
125
V
I
DSS
V
G S
= 0 V
V
DS
= 50 V
5
mA
I
GSS
V
G S
= 20 V
V
DS
= 0 V
5
A
V
GS(Q)
V
DS
= 10 V
I
D
= 250 mA
2
5
V
V
DS(on)
V
G S
= 10V
I
D
= 10 A
3
V
gfs
V
DS
= 10V
I
D
= 5 A
5
mho
C
ISS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
480
pF
C
OSS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
190
pF
C
RSS
V
G S
= 0V
V
DS
= 50 V
f = 1 MHz
18
pF
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 175 MHz
V
DD
= 50 V
I
DQ
= 500 mA
300
W
G
PS
f = 175 MHz
V
DD
= 50 V
P
out
= 300 W
I
DQ
= 500 mA
15
16
dB
D
f = 175 MHz
V
DD
= 50 V
P
out
= 300 W
I
DQ
= 500 mA
50
60
%
Load
Mismatch
f = 175 MHz
V
DD
= 50 V
P
out
= 300 W
I
DQ
= 500 mA
All Phase Angles
5: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
175 MHz
0.92 - j 0.14
3.17 + j 4. 34
Measured Gate to Gate and Drain to Drain, respectively.
REF.7163911A
SD2932
2/13
Maximum Thermal Resistance vs Case
Temperature
Capacitance vs Drain-Source Voltage
-25
0
25
50
75
100
Tcase, CASE TEMPERATURE (
C)
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
VGS,
GATE-SOURCE
VOLTAGE
(NORMALIZED)
Id=.1 A
Id=.25 A
Id=1 A
Id=2 A
Id=4 A
Id=7 A
Id=5 A
Id=9 A
Id=10 A
Id=11 A
DC Safe Operating Area
1
10
100
1000
Vds, DRAIN SOURCE VOLTAGE (V)
1
10
100
Ids,
DRAIN
CURRENT
(A)
(1)
Drain Current vs Gate Voltage
2
2.5
3
3.5
4
4.5
5
5.5
6
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID,
DRAIN
CURRENT
(A)
T=-20
C
T=+25
C
T=+80
C
Vds=10 V
0
10
20
30
40
50
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C,
CAPACITANCE
(pF)
Ciss
Coss
Crss
25 30 35 40 45 50 55
60
65
70
75
80
85
Tc, Case Temperature (
C)
0.34
0.36
0.38
0.4
0.42
Rth(j-c)
(C/W)
Gate Voltage vs Case Temperature
(1) Current in this area may be limited by RDS(on)
Two sides, each section equally loaded
SD2932
3/13
Output Power vs Input Power
0
2
4
6
8
10
12
14
16
18
20
22
Pin, INPUT POWER (W)
0
100
200
300
400
500
Pout,
OUTPUT
POWER
(W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Vdd=40 V
Vdd=50 V
Output Power vs Supply Voltage
Power Gain vs. Output Power
24 26 28 30 32 34 36 38 40 42 44 46 48 50
Vdd,DRAIN VOLTAGE (V)
100
150
200
250
300
350
400
450
Pout,OUTPUT
POWER
(W)
Pin=3.9 W
Pin=7.8 W
Pin=15.6 W
Idq=2 x 250mA
F=175Mhz
Output Power vs Input Power
0
2
4
6
8
10
12
14
16
18
20
22
Pin, INPUT POWER(W)
0
100
200
300
400
500
600
Pout,
OUTPUT
POWER
(W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
T=-20
C
T=+25
C
T=+80
C
Output Power vs Gate Voltage
0
100
200
300
400
500
Pout, OUTPUT POWER (W)
10
20
30
40
50
60
70
80
Nc,
EFFICIENCY
(%)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
Efficiency vs. Output Power
-3
-2
-1
0
1
2
3
VGS, GATE_SOURCE VOLTAG E (V)
0
100
200
300
400
Pout,
OUTPUT
POWER
(W)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
T=-20
C
T=+25
C
T=+80
C
0
100
200
300
400
500
Pout, OUTPUT POWER (W)
10
11
12
13
14
15
16
17
Gp,
POWER
GAIN
(dB)
Vdd=50V
Idq=2 x 250mA
F=175Mhz
TYPICAL PERFORMANCE (175 MHz)
SD2932
4/13
175 MHz Test Circuit Schematic (Production Test Circuit)
REF. 1022256B
SD2932
5/13
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