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Jun 2000
SD4100
RF POWER TRANSISTORS
UHF TV/LINEAR APPLICATIONS
M173
epoxy sealed
ORDER CODE
SD4100
BRANDING
SD4100
470 - 860 MHz
28 VOLTS
CLASS AB PUSH PULL
DESIGNED FOR HIGH POWER LINEAR
OPERATION
HIGH SATURATED POWER CAPABILITY
INTERNAL INPUT/OUTPUT MATCHING
NETWORKS PROVIDE HIGH BALANCED
IMPEDANCES FOR SIMPLIFIED CIRCUIT
DESIGN AND WIDE INSTANTANEOUS
BANDWIDTH
GAIN = 8.5 dB MIN.
P
OUT
= 100 W MIN. CW
P
OUT
= 125 W PEAK SYNC
DESCRIPTION
The SD4100 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter bal-
last resistors for high linearity Class AB operation
in UHF and Band IV, V television transmitters and
transposers.
PIN CONNECTION
1
3
2
1. Collector
2. Base
3. Emitter
1
2
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
0
C)
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage
65
V
V
CEO
Collector-Emitter Voltage
32
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
16
A
P
DISS
Power Dissipation
220
W
T
J
Junction Temperature
+200
0
C
T
STG
Storage Temperature
-65 to +150
0
C
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance
0.8
0
C/W
SD4100
2/4
ELECTRICAL SPECIFICATION (T
CASE
= 25
0
C)
STATIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BV
CBO
I
C
= 40
mA
I
E
= 0 mA
65
---
---
V
BV
CEO
I
C
= 80
mA
I
B
= 0 mA
32
---
---
V
BV
CER
I
C
=
120
mA
R
BE
= 75
40
---
---
V
BV
EBO
I
E
= 20 mA
I
C
= 0 mA
3.5
---
---
V
I
CEO
V
CE
= 28 V
I
B
= 0 mA
---
---
10
mA
h
FE
V
CE
= 5 V
I
C
= 4 A
25
---
120
---
DYNAMIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
OB
f = 1 MHz
V
CB
= 28 V (each side)
C
OB is not measurable due to Internal Output Matching Network
---
50
---
pF
REF.1017623C
DYNAMIC (CW)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
1dB
f = 860 MHz
P
REF
= 25 W
V
CC
= 28 V
I
CQ
= 200 mA
100
---
---
W
G
P
f = 860 MHz
P
OUT
= 100 W
V
CC
= 28 V
I
CQ
= 200 mA
8.5
---
---
dB
C
f = 860 MHz
P
OUT
= 100 W
V
CC
= 28 V
I
CQ
= 200 mA
55
---
---
%
Load
Mismatch
f = 860 MHz
P
OUT
= 100 W
V
CC
= 28 V
I
CQ
= 200 mA
ALL PHASE ANGLES
3:1
---
---
VSWR
DYNAMIC (VIDEO - STANDARD BLACK LEVEL)
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
G
P
f = 860 MHz
P
OUT
= 125 W
V
CC
= 28 V
I
CQ
= 200 mA
8.5
---
---
dB
P
1dB
f = 860 MHz
P
REF
= 25 W
V
CC
= 28 V
I
CQ
= 200 mA
125
---
---
W
P
1dB
f = 860 MHz
P
REF
= 25 W
V
CC
= 32 V
I
CQ
= 100 mA
150
---
---
W
SD4100
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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,
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