SD4590
RF POWER TRANSISTORS
800-960 MHz CELLULAR BASE STATION
GOLD METALLIZATION
DIFFUSED EMITTER BALLASTING
INTERNAL INPUT/OUTPUT MATCHING
COMMON EMITTER CONFIGURATION
DESIGNED FOR LINEAR OPERATION HIGH
SATURATED POWER CAPABILITY 26 VOLT,
900 MHz PERFORMANCE
P
OUT
=150 W MIN.
GAIN = 8.5 dB MIN.
IMD
3
= -28dB MAX. @ P
OUT
= 150W PEP
INHERENT RUGGEDNESS:
LOAD MISMATCH TOLERANCE OF
5:1 MIN. VSWR
3 dB OVERDRIVE CAPABILITY
ESD SENSITIVITY, CLASS 3 (MIL STD-883D
METHOD 3015)
DESCRIPTION
The SD4590 is designed for both analog and
digital cellular base stations over the 800 to 960
MHz frequency range, specifically those systems
requiring the high linearity and efficiency afforded
by class AB operation. Integrated input/output
pre-matching
simplifies
amplifier
design.
Ruggedness, MTTF, and linearity are enhanced
using
diffused
emitter
resistors
and
refractory/gold metallization.
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
CBO
Collect or-Base Voltage
65
V
V
CEO
Collect or-Emitter Volt age
28
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
25
A
P
DI SS
Power Dissipation
300
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
Junct ion-Case Thermal Resistance
0.60
o
C/ W
M208
epoxy sealed
ORDER CODE
BRANDING
SD4590
SD4590
1. Collector
3.Base
2. Emitter
1/8
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
BV
CBO
I
C
= 100 mA
V
BE
= 0 V
65
80
V
BV
CEO
I
C
= 100 mA
I
B
= 0 mA
28
30
V
BV
CER
IC = 100 mA
R
BE
= 80
33
40
V
BV
EBO
I
C
= 50 mA
I
C
= 0 mA
3. 5
4.0
V
I
CEO
V
CE
= 26 V
V
BE
= 0 V
10
mA
I
CEO
V
CE
= 10 V
V
BE
= 0 V
0.5
mA
I
EBO
V
BE
= 1 V
V
CE
= 0 V
0.1
mA
I
EBO
V
BE
= 2.5V
V
CE
= 0 V
3
mA
h
FE
V
CE
= 5V
I
C
= 6 A
25
45
120
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
C
OB
f = 1 MHz
V
CB
= 26 V
for inf ormation only - this part is collector matched
75
pF
DYNAMIC
(CW)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
I N
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
P
OUT
= 150 W
21
W
P
O UT
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
P
IN
= 21 W
150
175
W
G
P
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
P
OUT
= 150 W
8. 5
9.5
dB
C
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
P
OUT
= 150 W
50
55
%
P
1 dB
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
150
160
W
OVD
f = 900 MHz
V
CE
= 26 V
I
CQ
= 2x200 mA
Set P
OUT
= 150 W PEP; Increase P
IN
3dB
No Degratation in Device
Performance
DYNAMIC
(Two-Tone)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
*G
P
V
CE
= 26 V
I
CQ
= 2x200 mA
P
O UT
= 150 W PEP
8. 5
9.5
dB
*
C
V
CE
= 26 V
I
CQ
= 2x200 mA
P
O UT
= 150 W PEP
30
35
%
*I MD
3
V
CE
= 26 V
I
CQ
= 2x200 mA
P
O UT
= 150 W PEP
-32
-28
dBT
*Load
Mismatch
V
CE
= 26 V
I
CQ
= 2x200 mA
P
O UT
= 150 W PEP
VSWR = 5:1 MIN @ All Phase Angles
No Degratation in Device
Performance
*OVD
V
CE
= 26 V
I
CQ
= 2x200 mA
Set P
OUT
= 150 W PEP; Increase P
IN
3dB
No Degratation in Device
Performance
Note : f
1
= 900.00 MHz
f
2
= 900.10 MHz
REF 1016365E
TESTED PER SIDE
SD4590
2/8
Output Power vs Input Power
Output Power vs Supply Voltage
Power Gain vs Output Power
Output Power vs Frequency
Intermodulation Distortion vs Output Power
Broadband Performance
POWER
GAIN
(dB)
TYPICAL PERFORMANCE
860 MHz
960 MHz
900 MHz
VCE = 26V
I
CQ
= 40 0mA
P
IN
=
36W
36W
30W
24W
18W
12W
16W
6W
P
IN
=
ORDER
24W
3
RD
5
TH
7
TH
9
TH
8W
F
1
= 90 0.00MHz
F
2
= 90 0.10MHz
V
CE
= 26V
I
CQ
= 40 0mA
P
G
R
L
C
FREQ = 900MHz
I
CQ
= 400mA
FREQ = 900MHz
V
CE
= 26 mA
IMD
I
CQ
=
1200mA
900mA
600mA
400mA
300mA
P
OUT
= 150WPEP
V
CE
= 26V
I
CQ
= 400mA
V
CE
= 26V
I
CQ
= 400mA
SD4590
3/8
SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCES
FREQ.
Z
IN
(
)
Z
CL
(
)
800 MHz
4.25 + j 12.25
5.75
-
j 4.25
820 MHz
4.75 + j 13.25
5.00
-
j 2.75
840 MHz
5.25 + j 12.50
5.50
-
j 2.50
860 MHz
4.75 + j 10.25
5.00
-
j 3.00
880 MHz
6.25 + j 9.00
4.60
-
j 2.90
900 MHz
7.75 + j 10.25
4.25
-
j 2.90
920 MHz
6.50 + j 11.50
3.95
-
j 2.90
940 MHz
6.50 + j 10.25
3.80
-
j 2.80
960 MHz
8.50 + j 9.50
3.40
-
j 2.85
980 MHz
9.25 + j 11.50
3.10
-
j 3.00
1000 MHz
8.50 + j 13.25
2.75
-
j 3.15
CONDITIONS:
V
CE
= 26V
I
CQ
= 2 X 200mA
POUT = 150W PEP
IMD
3
-28dBT
(
f1 f2 = 100KHz)
NOTE: A = 800MHz
B = 1000MHz
(Measured in 10MHz increments)
A
B
B
Z
IN
A
Z
CL
SD4590
4/8
TEST CIRCUIT SCHEMATIC
PCB
ROGERS
,
r = 2.55, Height = 31.25 mil 1 oz. Cu.
Balun 1,2
50
Coaxial Cable Lenght 2.2" attached to 2 x 50
printed microstrip
transmission lines (see photomaster)
C1, C2, C23, C25
75pF Ceramic Chip ATC B
C3, C4, C21, C22
2 x 47pF Ceramic Chip, ATC B
C5, C16
0.8 - 8pF Variable, JOHANSON Giga - Trim
C6, C9
750pF Ceramic Chip, ATC B
C7, C10
39nF Ceramic Chip, ATCB
C8, C11, C24, C26 47
F, 50V Electrolytic
C13, C17
100
F, 50V Electrolytic
C12
9.1pF, Ceramic Chip, ATC A
C14, C18
39nF Ceramic Chip (OPTIONAL)
C15, C19
750pF Ceramic Chip (OPTIONAL)
C20
1.3pF Ceramic Chip, ATC B
L1, L4, L5, L8
12 Turns, #200 AWG, 0.15" I.D. (Tight)
L2, L3, L6, L7
4 Turns, #20AWG, 0.13" I.D. (1:1)
R1, R2, R3, R4
5 X 50
Chip Resistor
TEST CIRCUIT COMPONENT PART LIST
SD4590
5/8
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