PRELIMINARY DATA
CELLULAR BASE STATION APPLICATIONS
RF & MICROWAVE TRANSISTORS
.438 x .450 2LFL (M173)
epoxy sealed
.
GOLD METALLIZATION
.
860-960 MHz
.
26 VOLTS
.
EFFICIENCY 50% MIN.
.
P
OUT
=
60 W MIN. WITH 7.5 dB GAIN
DESCRIPTION
The SD4600 is designed for 960MHz mobile base
stations in both analog and digital applications.
Including double input and output matching net-
works, the SD4600 features high impedances
allowing operation over the full 860 to 960 MHz
bandwidth.
PIN CONNECTION
BRANDING
SD4600
ORDER CODE
SD4600
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
60
V
V
CEO
Collector-Emitter Voltage
28
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
8
A
P
DISS
Power Dissipation
146
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
1.2
C/W
*Applies only to rated RF amplifier operation
SD4600
1. Collector
3. Emitter
2. Base
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditi ons
Value
Uni t
Min.
Typ.
Max.
P
OUT
f
=
960MHz
V
CC
=
26V
I
CQ
=
.200A
60
65
--
W
c
f
=
960MHz
V
CC
=
26V
I
CQ
=
.200A
50
58
--
%
G
P
f
=
960MHz
V
CC
=
26V
I
CQ
=
.200A
7.5
8.0
--
dB
VSWR
f
=
960MHz
V
CC
=
26V
5:1
--
--
--
STATIC (Total Device)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
BV
CBO
I
C
=
100mA
60
--
--
V
BV
EBO
I
E
=
20mA
3.5
--
--
V
BV
CEO
I
C
=
100mA
28
--
--
V
I
CEO
V
CE
=
25V
--
--
30
mA
h
FE
V
CE
=
5V
I
C
=
3A
25
--
80
--
DYNAMIC (Total Device)
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
FREQ
=
960MHz
V
CC
=
26V
I
CQ
=
200mA
P
OUT
C
SD4600
2/4
TEST CIRCUIT
C1,C10 : 120pF Chip Capacitor B Size
C2,C5
C11,C14: 470pF Chip Capacitor B Size
C6,C7 : 100
F Electrolytic Capacitor
C8
: 4.7
F Electrolytic Capacitor
C9
: 10
F Electrolytic Capacitor
C15
: 39,000pF Chip Capacitor
C16
: 63
F Capacitor
C17
: .6 - 4.5pF Johanson Variable Capacitor
C18
: .8 - 8.0pF Johanson Variable Capacitor
R1, R2 : 20
(.5W) Chip Resistor
R3
: 10K Potentiometer
R4
: 4
3.17K
(.25W) Chip Resistor
S1
: Teflon Glass Er
=
2.33 H
=
.020
TYPICAL INPUT
IMPEDANCE
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
Z
IN
H
L
H
L
P
OUT
=
60W
V
CC
=
26V
Normalized to 50ohms
IMPEDANCE DATA
Z
IN
Z
CL
FREQ.
Z
IN
(
)
Z
CL
(
)
860 MHz
17 + j 10
11 + j 12
900 MHz
14 + j 10
10 + j 10.5
960 MHz
12.5 + j 8
8.5 + j 8.5
SD4600
3/4
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0173
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD4600
4/4
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