PRELIMINARY DATA
GENERAL PURPOSE LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 280 4L STUD (M122)
epoxy sealed
.
GOLD METALLIZATION
.
EMITTER SITE BALLASTING
.
INTERNAL INPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC PACKAGE
.
COMMON EMITTER CONFIGURATION
.
P
OUT
=
1.5 W MIN. WITH 9.5 dB GAIN
DESCRIPTION
The SD5000 is a NPN Silicon Transistor designed
for high gain linear performance at 1000 MHz.
This part uses gold metallized die and polysilicon
site ballasting to achieve high reliability and rug-
gedness.
The SD5000 can be used for applications such
as Telecommunications, Radar, ECM, Space and
other commercial and military systems.
PIN CONNECTION
BRANDING
S10A015
ORDER CODE
SD5000
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
Symbol
Parameter
Value
Uni t
V
CBO
Collector-Base Voltage
50
V
V
CES
Collector-Emitter Voltage
50
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Device Current
1.0
A
P
DISS
Power Dissipation
7.0
W
T
J
Junction Temperature
+200
C
T
STG
Storage Temperature
-
65 to +150
C
R
TH(j-c)
Junction-Case Thermal Resistance
25
C/W
SD5000
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
November 1992
1/4
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Uni t
Min.
Typ.
Max.
P
OUT
1dB f
=
1 GHz
V
CC
=
20 V
I
C
=
220 mA
1.5
--
--
W
G
P
f
=
1 GHz
V
CC
=
20 V
I
C
=
220 mA
9.5
--
--
dB
VSWR
f
=
1 GHz
V
CC
=
20 V
I
C
=
220 mA
--
--
25:1
--
C
OB
f
=
1 MHz
V
CB
=
20 V
--
--
4.0
pF
:
STATIC
Symbol
Test Condi tions
Valu e
Unit
Mi n.
Typ.
Max.
BV
CBO
I
C
=
10mA
50
--
--
V
BV
EBO
I
E
=
5mA
3.5
--
--
V
BV
CES
I
C
=
10mA
50
--
--
V
BV
CEO
I
C
=
5mA
23
--
--
V
I
CBO
V
CB
=
28V
--
0.2
--
mA
h
FE
V
CE
=
5V
I
C
=
100mA
18
--
200
--
DYNAMIC
SD5000
2/4
TEST CIRCUIT
B1, B2 : Ferrite Beads
C1,C2 : 120 pF Chip Capacitor
C3
: .4 - 2.5 pF Johanson Capacitor
C4
: .8 - 8 pF Johanson Capacitor
C5,C6
C7,C8 : 220 pF Chip Capacitor
C9,C10
: 1000 pF Chip Capacitor
C11
: .1
F Capacitor
C12,C13 : 15,000 pF EMI Filter
L1,L2
: 5 Turn Choke; Wire Diameter .025", I.D. 0.125"
Substrate material: Er
=
10.2, H
=
.050", 1oz. Copper
IMPEDANCE DATA
FREQ.
Z
IN
(
)
Z
CL
(
)
1000 MHz
4.0 + j 3.3
20.8 + j 33.3
SD5000
3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SD5000
4/4
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