ChipFind - документация

Электронный компонент: SD57030

Скачать:  PDF   ZIP
1/7
March, 24 2003
SD57030
RF POWER TRANSISTORS
The
LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 30 W WITH 13 dB gain @ 945 MHz
BeO FREE PACKAGE
DESCRIPTION
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
M243
(Epoxy Sealed)
ORDER CODE
SD57030
BRANDING
TSD57030
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
C)
Symbol
Parameter
Value
Unit
V
(BR)DSS
Drain-Source Voltage
65
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 M
)
65
V
V
GS
Gate-Source Voltage
+
20
V
I
D
Drain Current
4
A
P
DISS
Power Dissipation (@ Tc = 70C)
74
W
Tj
Max. Operating Junction Temperature
200
C
T
STG
Storage Temperature
-65 to + 200
C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.75
C/W
SD57030
2/7
ELECTRICAL SPECIFICATION (T
CASE
= 25
C)
STATIC
DYNAMIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS
= 0 V
I
DS
= 10 mA
65
V
I
DSS
V
GS
= 0 V
V
DS
= 28 V
1
A
I
GSS
V
GS
= 20 V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28 V
I
D
= 50 mA
2.0
5.0
V
V
DS(ON)
V
GS
= 10 V
I
D
= 3 A
1.3
V
G
FS
V
DS
= 10 V
I
D
= 3 A
1.8
mho
C
ISS
*
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
58
pF
C
OSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
34
pF
C
RSS
V
GS
= 0 V
V
DS
= 28 V
f = 1 MHz
2.7
pF
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
P
OUT
V
DD
= 28 V
I
DQ
= 50 mA
f = 945 MHz
30
W
G
PS
V
DD
= 28 V I
DQ
= 50 mA
P
OUT
= 30 W
f = 945 MHz
13
15
dB
D
V
DD
= 28 V I
DQ
= 50 mA
P
OUT
= 30 W
f = 945 MHz
50
60
%
Load
mismatch
V
DD
= 28 V I
DQ
= 50 mA
P
OUT
= 28 W
f = 945 MHz
ALL PHASE ANGLES
10:1
VSWR
Ref. 7143417B
3/7
SD57030
Output Power vs. Input Power
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pin, INPUT POW ER (W )
0
10
20
30
40
P
o
u
t, O
U
T
P
U
T
P
O
W
E
R
(
W
)
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
TYPICAL PERFORMANCE (CW)
Power Gain and Efficiency vs. Output Power
0
5
10
15
20
25
30
35
40
Pout, OUTPUT POWER (W)
0
3
6
9
12
15
18
21
Gp
, P
O
W
E
R
GA
IN
(
d
B
)
0
10
20
30
40
50
60
70
Nd
,
DRA
I
N
E
FFI
CI
E
NCY
(
%
)
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
Gain
Eff
Output Power vs. Gate Source Voltage
-5
-4
-3
-2
-1
0
1
2
3
4
Vgs, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
25
30
35
P
o
u
t, O
U
T
P
U
T
P
O
W
E
R
(
W
)
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
Output Power vs. Supply Voltage
8
12
16
20
24
28
32
VDD, SUPPLY VOLTAGE (V)
0
5
10
15
20
25
30
35
P
o
u
t, O
U
T
P
U
T
P
O
W
E
R
(
W
)
f= 945 MHz
Idq= 50 mA
Pin= .24 W
Pin= .84 W
Pin= .47 W
SD57030
4/7
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
C19
200
F / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C18, C14
0.1
F / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR
C17
100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C16, C12, C11,C1
47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C15
10
F / 50V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR
C13
100 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C9, C2
0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR
C8
6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C7, C6, C5 ,C4
10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
C3
3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
R3
120 0-IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR
R2
4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR
R1
18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR
FB2, FB1
SHIELD BEAD SURFACE MOUNT EMI
L2, L1
INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET
WIRE
PCB
WOVEN FIBERGLASS REINFORCED PTFE 0.080'' THK,
r=2.55, 2 Oz EDCu BOTH SIDE
V
IN
RF
G
G
+
+
OUT
RF
+
D
+
D
V
NOTES:
1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT.
2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP.
3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES.
5/7
SD57030
TEST CIRCUIT PHOTOMASTER
SD57030
4 inche
s
6.4 inches
TEST CIRCUIT
SD57030
SD57030
6/7
Controlling dimension: Inches
1022142E
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
5.21
5.72
0.205
0.225
B
5.46
6.48
0.215
0.255
C
5.59
6.10
0.220
0.240
D
14.27
0.562
E
20.07
20.57
0.790
0.810
F
8.89
9.40
0.350
0.370
G
0.10
0.15
0.004
0.006
H
3.18
4.45
0.125
0.175
I
1.83
2.24
0.072
0.088
J
1.27
1.78
0.050
0.070
DIM.
7/7
SD57030
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2003 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com