SD57045
RF POWER TRANSISTORS
The
LdmoST FAMILY
ADVANCE DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 45 W PEP with 13 dB gain @ 945 MHz
BeO FREE PACKAGE
DESCRIPTION
The SD57045 is a common source N-Channel
Enhancement-Mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57045 is designed for high gain
and
broadband
performance
operating
in
common source mode at 28V. It is ideal for base
stations applications requiring high linearity.
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
65
V
V
DGR
Drain-Gat e Voltage (R
GS
= 1 M
)
65
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
5
A
P
DI SS
Power Dissipation (@ T c = 70
o
C)
93
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 200
o
C
THERMAL DATA (T
case
= 70
o
C)
R
th (j-c)
R
th(c -s)
Junct ion-Case Thermal Resistance
Case-Heatsink Thermal Resist ance
1.4
0.45
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M243
(Epoxy Sealed)
ORDER CODE
BRANDING
SD57045
TSD57045
1. Drain
3.Source
2. Gate
1/11
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 1 mA
65
V
I
DSS
V
G S
= 0V
V
DS
= 28 V
1
A
I
GSS
V
G S
= 20V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28V
I
D
= 250 mA
2. 5
5.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 3 A
0.7
0.9
V
G
FS
V
DS
= 10V
I
D
= 5 A
2. 0
2.7
mho
C
ISS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
80
pF
C
OSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
40
pF
C
RSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
3.2
pF
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
f = 945 MHz
V
DD
= 28V
I
DQ
= 250 mA
45
W
I MD
3
V
DD
= 28 V
P
out
= 45 W PEP
I
DQ
= 250 mA
-32
-28
dBc
G
PS
V
DD
= 28 V
P
out
= 45 W PEP
I
DQ
= 250 mA
13
15
dB
D
V
DD
= 28 V
P
out
= 45 W PEP
I
DQ
= 250 mA
33
40
%
Load
Mismatch
f = 945 MHz
V
DD
= 28 V
P
ou t
= 45 W
I
DQ
= 250 mA
ALL PHASE ANGLES
10: 1
VSW R
Note: f
1
= 945.0 MHz
f
2
= 945.1 MHz
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
925 MHz
1.27 + j 0.82
2.22 - j 1.63
930 MHz
1.21 + j 0.79
2.24 - j 1.61
945 MHz
1.04 + j 0.71
2.30 - j 1.52
960 MHz
0.93 + j 0.43
2.37 - j 1.37
965 MHz
0.91 + j 0.41
2.43 - j 1.36
REF. 7133620B
SD57045
2/11
Capacitance vs Drain-Source Voltage
Drain Current vs Gate Voltage
Maximum Thermal Resistance vs Case
Temperature
Gate-Source Voltage vs Case Temperature
DC Maximum Safe Operating Area
TYPICAL PERFORMANCE
SD57045
3/11
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Broadband Power Performance
Output Power vs. Drain Voltage
Output Power vs. Gate Bias Voltage
TYPICAL PERFORMANCE (CW)
Power Gain vs Output Power
SD57045
4/11
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Intermodulation Distorsion vs. Output Power
Intermodulation Distorsion vs. Output Power
TYPICAL PERFORMANCE (PEP)
Class A Third Order Intercept Point
SD57045
5/11
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