SD57060-01
RF POWER TRANSISTORS
The
LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
s
EXCELLENT THERMAL STABILITY
s
COMMON SOURCE CONFIGURATION
s
P
OUT
= 60 W with 11.5 dB gain @ 945 MHz
s
BeO FREE PACKAGE
DESCRIPTION
The SD57060-01 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57060-01 is designed for high
gain and broadband performance operating in
common source mode at 28V. It is ideal for base
station applications requiring high linearity.
PIN CONNECTION
January 2000
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
65
V
V
G S
Gat e-Source Volt age
20
V
I
D
Drain Current
7
A
P
DI SS
Power Dissipation (@ Tc= 70
o
C)
118
W
T
j
Max. O perating Junction Temperature
200
o
C
T
STG
Storage T emperat ure
-65 to 150
o
C
THERMAL DATA (T
case
= 70
o
C)
R
th (j-c)
R
th(c -s)*
Junction-Case Thermal Resistance
Case-Heatsink T hermal Resist ance
1.1
0.5
o
C/ W
o
C/ W
* Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).
M250
epoxy sealed
ORDER CODE
BRANDING
SD57060-01
TSD57060-01
1. Drain
3.Source
2. Gate
1/8
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Output Power vs Drain-Source Voltage
Output Power and Power Gain vs Input Power
Efficiency vs Output Power
Intermodulation Distorsion vs Output Power
TYPICAL PERFORMANCE
SD57060-01
3/8
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