SD57120
RF POWER TRANSISTORS
The
LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION,
PUSH-PULL
P
OUT
= 120 W with 13 dB gain @ 960 MHz
BeO FREE PACKAGE
INTERNAL INPUT MATCHING
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and
broadband
performance
operating
in
common source mode at 28V. Its internal
matching
makes
it
ideal
for
base
station
applications requiring high linearity.
PIN CONNECTION
March 2000
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
o
C)
Symbol
Parameter
Val ue
Uni t
V
(BR)DSS
Drain Source Voltage
65
V
V
G S
Gat e-Source Voltage
20
V
I
D
Drain Current
14
A
P
DI SS
Power Dissipation (@ T c= 70
o
C)
236
W
T
j
Max. O perat ing Junction Temperature
200
o
C
T
STG
Storage Temperature
-65 to 150
o
C
THERMAL DATA
R
th (j-c)
Junct ion-Case Thermal Resistance
0.55
o
C/ W
M252
epoxy sealed
ORDER CODE
BRANDING
SD57120
XSD57120
1. Drain
4. Gate
2. Drain
5. Gate
3. Source
1/7
ELECTRICAL SPECIFICATION (T
case
= 25
o
C)
STATIC (Per Section)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
V
G S
= 0V
I
DS
= 10 mA
65
V
I
DSS
V
G S
= 0V
V
DS
= 28 V
1
A
I
GSS
V
G S
= 20V
V
DS
= 0 V
1
A
V
GS(Q)
V
DS
= 28V
I
D
= 100 mA
3. 0
5.0
V
V
DS( ON)
V
G S
= 10V
I
D
= 3 A
0.7
0.8
V
G
FS
V
DS
= 10V
I
D
= 3 A
3
mho
C
I SS
*
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
175
pF
C
OSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
44
pF
C
RSS
V
G S
= 0V
V
DS
= 28 V
f = 1 MHz
1.7
pF
* Includes Internal Input Moscap.
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
P
O UT
V
DD
= 28V
f = 960 MHz
I
DQ
= 800 mA
120
W
G
PS
V
DD
= 28 V
P
out
= 120 W
I
DQ
= 800 mA
13
14
dB
D
V
DD
= 28 V
P
out
= 120W
I
DQ
= 800 mA
50
%
Load
Mismatch
f = 960 MHz
V
DD
= 28 V
P
o ut
= 120 W
I
DQ
= 800 mA
ALL PHASE ANGLES
10: 1
VSW R
IMPEDANCE DATA
FREQ .
Z
IN
(
)
Z
DL
(
)
945 MHz
3.9 + j 4. 9
3.6 - j 5.1
960 MHz
4. 1 - j 4.6
3.24 - j 4.74
980 MHz
3.9 + j 5. 2
3. 27 - j 6.9
Measured gate to gate and drain to drain respectively.
SD57120
2/7
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