SGSD100
SGSD200
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MONOLITHIC DARLINGTON
CONFIGURATION
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING
APPLICATION
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The SGSD100 is silicon epitaxial-base NPN
power
transistor
in
monolithic
Darlington
configuration
mounted
in
TO-218
plastic
package.
It is inteded for use in general purpose and high
current amplifier applications.
The complementary PNP type is the SGSD200.
INTERNAL SCHEMATIC DIAGRAM
September 1997
1
2
3
TO-218
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
SGSD100
PNP
SGSD200
V
CBO
Collector-Base Volta ge (I
E
= 0)
80
V
V
CEO
Collector-Emitte r Voltage (I
B
= 0 )
80
V
I
C
Collector Current
25
A
I
CM
Collector Peak Current
40
A
I
B
Base Current
6
A
I
BM
Base Peak Current
10
A
P
tot
Total Dissipation at T
c
25
o
C
130
W
T
st g
Storage Temp erature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1/6
THERMAL DATA
R
thj-ca se
Thermal Resistance Ju nction- case
Max
0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collecto r Cu t-of f
Current (I
E
= 0)
V
CE
= 80 V
V
CE
= 80 V
T
c
= 100
o
C
0. 5
1. 5
mA
mA
I
CEV
Collecto r Cu t-of f
Current (V
BE
= -0.3V)
V
CE
= 80 V
V
CE
= 80 V
T
c
= 100
o
C
0. 1
2
mA
mA
I
CEO
Collecto r Cu t-of f
Current (I
B
= 0)
V
CE
= 60 V
V
CE
= 60 V
T
c
= 100
o
C
0. 5
1. 5
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(su s)
Collecto r-Emitter
Sustaining Voltage
I
C
= 50 mA
80
V
V
CE(sat )
Collecto r-Emitter
Satu ration Vo ltage
I
C
= 5 A
I
B
= 20 mA
I
C
= 5 A
I
B
= 20 mA
T
c
= 100
o
C
I
C
= 10 A
I
B
= 4 0 mA
I
C
= 10 A
I
B
= 4 0 mA
T
c
= 1 00
o
C
I
C
= 20 A
I
B
= 8 0 mA
I
C
= 20 A
I
B
= 8 0 mA
T
c
= 1 00
o
C
0.95
0.8
1.2
1.3
2
2.3
1. 2
1.75
3. 5
V
V
V
V
V
V
V
BE( sat)
Base-Emitter
Satu ration Vo ltage
I
C
= 20 A
I
B
= 8 0 mA
I
C
= 20 A
I
B
= 8 0 mA
T
c
= 1 00
o
C
2.6
2.5
3. 3
V
V
V
BE
Base-Emitter Volta ge
I
C
= 10 A
V
CE
= 3 V
I
C
= 10 A
V
CE
= 3 V
T
c
= 100
o
C
1
1.8
1.6
3
V
V
h
FE
DC Current Gain
I
C
= 5 A
V
CE
= 3 V
I
C
= 5 A
V
CE
= 3 V
T
c
= 1 00
o
C
I
C
= 10 A
V
CE
= 3 V
I
C
= 10 A
V
CE
= 3 V
T
c
= 100
o
C
I
C
= 20 A
V
CE
= 3 V
I
C
= 20 A
V
CE
= 3 V
T
c
= 100
o
C
600
500
300
5000
8000
4000
8000
2000
2000
150 00
120 00
6000
V
F
Diod e Forward Voltage I
F
= 5 A
I
F
= 5 A
T
c
= 1 00
o
C
I
F
= 10 A
I
F
= 10 A
T
c
= 100
o
C
I
F
= 20 A
I
F
= 20 A
T
c
= 100
o
C
1.2
0.85
1.6
1.4
2.3
1.3
V
V
V
V
V
V
E
s/ b
Second Breakdown
Energy
V
CC
= 3 0 V
L = 3 mH
V
CC
= 3 0 V
L = 3 mH
T
c
= 1 00
o
C
250
250
mJ
mJ
I
s/b
Second Breakdown
Current
V
CE
= 25 V
t = 500 ms
6
A
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP type voltage and current values are negative.
SGSD100/SGSD200
2/6
Safe Operating Areas
DC Current Gain (PNP type)
DC Current Gain (PNP type)
DC Current Gain (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
SGSD100/SGSD200
3/6
Collector-Emitter Saturation Voltage (PNP type)
SGSD100/SGSD200
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1
2
3
TO-218 (SOT-93) MECHANICAL DATA
P025A
SGSD100/SGSD200
5/6
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