SMBYW01-200
October 1999 - Ed: 4A
HIGH EFFICIENCY FAST RECOVERY DIODE
SMB
(JEDEC DO-214AA)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
8
A
I
F(AV)
Average forward current
Tlead=140
C
= 0.5
1
A
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
60
A
T
stg
Storage and junction temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values)
Single chip rectifier suited to Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION
VERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP BIPOLAR
DEVICE
LOW PEAK FORWARD VOLTAGE FOR TELE-
COM TRANSIENT OPERATION SUCH AS IN
LIGHTING PROTECTION CIRCUITS
FEATURES AND BENEFITS
I
F(AV)
1 A
V
RRM
200 V
V
F
(max)
0.71 V
Tj (max)
150 C
MAIN PRODUCT CHARACTERISTICS
1/5
Symbol
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
T
j
= 25
C
I
F
= 1 A
0.9
V
T
j
= 150
C
I
F
= 1 A
0.65
0.71
I
R
**
Reverse leakage current
T
j
= 25
C
V
R
= V
RRM
3
A
T
j
= 125
C
180
400
Pulse test : * tp = 380
s,
< 2 %
** tp = 5 ms,
< 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.58 x I
F(AV)
+ 0.118 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
T
j
= 25
C
I
F
= 0.5 A I
rr
= 0.25 A I
R
= 1A
25
ns
I
F
= 1 A dI
F
/dt = - 50 A/
s V
R
= 30V
25
35
t
fr
T
j
= 25
C
I
F
= 1A dI
F
/dt = 100 A/
s
25
ns
V
FP
T
j
= 25
C
I
F
= 1A dI
F
/dt = 100 A/
s
5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-l)
Junction to lead
13
C/W
THERMAL RESISTANCES
SMBYW01-200
2/5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
PF(av)(W)
= 0.2
= 0.5
= 1
= 0.05
= 0.1
IF(av) (A)
Fig. 1: Average forward power dissipation versus
average forward current .
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
IM(A)
P=1.5W
P=1.0W
P=0.5W
P=0.25W
Fig. 2: Peak current versus form factor.
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tamb(C)
IF(av)(A)
Rth(j-a)=100C/W
Rth(j-a)=Rth(j-l)
Fig. 3: Average forward current versus ambient
temperature (
=0.5).
1E-3
1E-2
1E-1
1E+0
2
3
4
5
6
7
8
t(s)
IM(A)
Ta=25C
Ta=50C
Ta=75C
Fig. 4: Non repetitive surge peak forward current
versus overload duration.
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.01
0.10
1.00
tp(s)
Zth(j-a)(C/W)
Single pulse
= 0.2
= 0.5
= 0.1
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35
m).
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.01
0.10
1.00
10.00
50.00
IFM(A)
VFM(V)
Tj=125C
Tj=25C
Fig 6: Forward voltage drop versus forward current
(maximum values).
SMBYW01-200
3/5
1
10
100
200
0
2
4
6
8
10
12
VR(V)
C(pF)
F=1MHz
Tj=25C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
0
20
40
60
80
100 120 140 160 180 200
0
1
2
3
4
5
6
dIF/dt(A/s)
IRM(A)
IF=IF(av)
90% confidence
Tj=125C
Fig. 8: Reverse recovery current versus dI
F
/dt .
0
20
40
60
80
100 120 140 160 180 200
0
10
20
30
40
50
60
70
80
90
100
trr(ns)
IF=IF(av)
90% confidence
Tj=125C
dIF/dt(A/s)
Fig. 9: Reverse recovery time versus dI
F
/dt.
0
20
40
60
80
100 120 140 160 180 200
0
10
20
30
40
50
60
70
80
90
100
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125C
dIF/dt(A/s)
Fig. 10: Reverse recovery charges versus dI
F
/dt.
0
25
50
75
100
125
150
0.25
0.50
0.75
1.00
1.25
Tj(C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=125C]
IRM
Qrr
Fig. 11: Dynamic parameters versus junction
temperature.
0
1
2
3
4
5
0
20
40
60
80
100
120
S(Cu) (cm)
Rth(j-a) (C/W)
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35
m)
SMBYW01-200
4/5
PACKAGE MECHANICAL DATA
SMB
E
C
L
E1
D
A1
A2
b
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
1.52
2.75
2.3
1.52
FOOT PRINT DIMENSIONS (in millimeters)
SMB (Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type
Marking
Package
Weight
Base qty
Delivery mode
SMBYW01-200
B20
SMB
0.11g
2500
Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
SMBYW01-200
5/5
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