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SMP50-xxx
s
Bidirectional crowbar protection
s
Voltage range from 62V to 270V
s
Low capacitance from 15pF to 30pF typ.@ 50V
s
Low leakage current: I
R
= 2A max.
s
Holding current: I
H
= 150 mA min.
s
Repetitive peak pulse current:
I
PP
= 50 A (10/1000 s)
FEATURES
SMA
(JEDEC DO-214AC)
The SMP50-xxx series has been designed to
protect telecommunication equipment against
lightning and transient induced by AC power lines.
The package / die size ratio has been optimized by
using the SMA package.
DESCRIPTION
SCHEMATIC DIAGRAM
TELECOM EQUIPMENT PROTECTION: TRISILTM
November 2002 - Ed: 3B
Telecommunication equipment such as
s
Analog and digital line cards (xDSL, T1/E1,
ISDN...).
s
Terminals (phone, fax, modem...) and central
office equipment.
MAIN APPLICATIONS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils
are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459
and FCC part 68. Trisils have UL94 V0 resin approved. SMA package is JEDEC registred. (Trisils are UL
497B approved - file: E136224).
BENEFITS
SMP50-xxx
2/8
Standard
Peak Surge
Voltage
(V)
Voltage
Waveform
(s)
Required peak
current (A)
Current
Waveform
(s)
Minimum
serial resistor
to meet
standard (
)
GR-1089 Core
First level
2500
1000
2/10
10/1000
500
100
2/10
10/1000
12
10
GR-1089 Core
Second level
5000
2/10
500
2/10
24
GR-1089 Core
Intra-building
1500
2/10
100
2/10
0
ITU-T-K20 / K21
6000
1500
10/700
150
37.5
5/310
53
0
ITU-T-K20
(IEC61000-4-2)
6000
8000
1/60 ns
ESD contact discharge
ESD air discharge
0
0
VDE0433
4000
2000
10/700
100
50
5/310
21.5
0
VDE0878
4000
2000
1.2/50
100
50
1/20
0
0
IEC61000-4-5
4000
4000
10/700
1.2/50
100
100
5/310
8/20
21.5
0
FCC Part 68, lightning
surge type A
1500
800
10/160
10/560
200
100
10/160
10/560
12.5
6.5
FCC Part 68, lightning
surge type B
1000
9/720
25
5/320
0
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Symbol
Parameter
V
RM
Stand-off voltage
I
RM
Leakage current at V
RM
V
R
Continuous reverse voltage
V
BR
Breakdown voltage
V
BO
Breakover voltage
I
H
Holding current
I
BO
Breakover current
I
PP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS
(T
amb
= 25C)
Symbol
Parameter
Value
Unit
R
th
(j-a)
Junction to ambient with recommended footprint
120
C/W
R
th
(j-l)
Junction to leads
30
C/W
THERMAL RESISTANCES
SMP50-xxx
3/8
Symbol
Parameter
Value
Unit
I
PP
Repetitive peak pulse current:
10/1000 s
8/20 s
10/560 s
5/310 s
10/160 s
1/20 s
2/10 s
50
100
55
65
75
100
150
A
I
FS
Fail safe mode: maximum current (note 1)
8/20 s
2.5
kA
I
TSM
Non repetitive surge peak on-state current
(Sinusoidal)
t = 20ms
t = 16.6ms
t = 0.2s
t = 2s
25
28
16
8.5
A
It
It value for fusing
t = 16.6ms
t = 20ms
6.5
6.3
As
T
L
Maximum lead temperature for soldering during 10 s.
260
C
T
stg
T
j
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
C
C
ABSOLUTE RATINGS (T
amb
= 25C)
tr: rise time (s)
tp: pulse duration time (s)
ex: Pulse waveform 10/1000s
tr = 10s
tp = 1000s
Repetitive peak pulse current
100
50
% IPP
t
t
r
p
0
t
SMP50-xxx
4/8
Type
I
RM
@ V
RM
max
I
R
@ V
R MAX
Note 1
DYNAMIC
V
BO
@ I
BO
max
Note 2
STATIC
V
BO
@ I
BO
max
Note 3
I
H
min
Note 4
C
typ.
Note 5
C
typ.
Note 6
A
V
A
V
V
mA
V
mA
mA
pF
pF
SMP50-62
2
56
50
62
85
800
82
800
150
30
50
SMP50-68
61
68
93
90
150
30
45
SMP50-100
90
100
135
133
150
20
40
SMP50-120
108
120
160
160
150
20
40
SMP50-130
117
130
173
173
150
20
35
SMP50-180
162
180
235
240
150
15
30
SMP50-200
180
200
262
267
150
15
30
SMP50-220
198
220
285
293
150
15
30
SMP50-240
216
240
300
320
150
15
30
SMP50-270
243
270
350
360
150
15
30
Note 1:
IR measured at VR guarantee VBRmin
VR
Note 2:
See functional breakover voltage test circuit 1.
Note 3:
See test circuit 2.
Note 4:
See functional holding current test circuit 3.
Note 5:
VR = 50V bias,VRMS = 1V, F = 1MHz.
Note 6:
VR = 2V bias, VRMS = 1V, F = 1MHz
ELECTRICAL PARAMETERS (Tamb = 25C)
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
10
20
30
40
t(s)
ITSM(A)
F=50Hz
Fig. 1: Non repetitive surge peak on-state current
versus overload duration (Tj initial = 25C)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
1
2
5
10
20
50
VT(V)
IT(A)
Tj=25C
Fig. 2: On-state voltage versus on-state current
(typical values).
SMP50-xxx
5/8
-40
-20
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Tj(C)
IH[Tj] / IH[Tj=25C]
Fig. 3: Relative variation of holding current versus
junction temperature.
-40
-20
0
20
40
60
80
100
120
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
Tj(C)
VBO[Tj] / VBO[Tj=25C]
Fig. 4: Relative variation of breakover voltage ver-
sus junction temperature.
25
50
75
100
125
1
10
100
1000
2000
Tj(C)
IRM[Tj] / IRM[Tj=25C]
VR=VRM
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1
10
100
200
tp (s)
Zth(j-a)(C/W)
Zth(j-a)
Fig. 6: Relative variation of thermal impedance
versus pulse duration.
1
2
5
10
20
50
100
300
0.0
0.5
1.0
1.5
2.0
2.5
VR(V)
C [VR] / C [VR=50V]
Tj=25C
F=1MHz
VRMS=1V
Fig. 7: Relative variation of junction capacitance
versus reverse voltage applied (typical values).
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