SO2907
SO2907A
SMALL SIGNAL PNP TRANSISTORS
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
MEDIUM CURRENT AF AMPLIFICATION
AND SWITCHING
s
NPN COMPLEMENTS ARE RESPECTIVELY
SO2907 AND SO2907A
INTERNAL SCHEMATIC DIAGRAM
March 1996
1
2
3
SOT-23
Type
Marking
SO2907
P05
SO 2907A
P03
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
SO2907
SO 2907A
V
CBO
Collector-Emit ter Voltage (V
BE
= 0)
-60
-60
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
-40
-60
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
CM
Collector Peak Current
-0. 8
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
350
mW
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1/4
THERMAL DATA
R
t hj-am b
R
th j-SR
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Substrat e
Max
350
290
o
C/W
o
C/W
Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CEX
Collect or Cut-off
Current
V
CE
= -30 V
V
BE
= -3 V
-50
nA
I
BEX
Base Cut-off Current
V
CE
= -30 V
V
BE
= -3 V
-50
nA
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= -50 V
for SO2907
for SO2907A
-20
-10
nA
nA
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -10 mA
for SO2907
for SO2907A
-40
-60
V
V
V
( BR)CBO
Collect or-Base
Breakdown Volt age
(I
B
= 0)
I
C
= -10
A
-60
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -10
A
-5
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(s at)
Collect or-Base
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
DC Current G ain
I
C
= -0.1 mA
V
CE
= -10 V
for SO2907
for SO2907A
I
C
= -1 mA
V
CE
= -10 V
for SO2907
for SO2907A
I
C
= -10 mA
V
CE
= -10 V
for SO2907
for SO2907A
I
C
= -150 mA
V
CE
= -10 V
35
75
50
100
75
100
100
300
f
T
Transit ion F requency
I
C
= -50 mA V
CE
= -20V f = 100MHz
200
MHz
C
CB
Collect or Base
Capacitance
I
E
= 0
V
CB
= -10 V
f = 1 MHz
8
pF
C
EB
Emitt er Base
Capacitance
I
C
= 0
V
EB
= -2 V
f = 1 MHz
30
pF
t
d
Delay Time
I
C
= -150 mA
I
B1
= -15 mA
10
ns
t
r
Rise Time
40
ns
t
on
Switching On Time
45
ns
t
s
St orage Time
I
C
= -150 mA
I
B1
= -I
B2
= -15mA
80
ns
t
f
Fall T ime
30
ns
t
of f
Switching Of f Time
100
ns
Pulsed: Pulse duration = 300
s, duty cycle
2 %
SO2907/SO2907A
2/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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.
SO2907/SO2907A
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