SO642
SMALL SIGNAL NPN TRANSISTOR
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTOR
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
HIGH VOLTAGE TRANSISTOR FOR VIDEO
AMPLIFIER
s
PNP COMPLEMENT IS SO692
INTERNAL SCHEMATIC DIAGRAM
March 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
300
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
300
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
6
V
I
C
Collect or Current
0.1
A
I
CM
Collect or Peak Current
0.3
A
P
t ot
Total Dissipation at T
c
= 25
o
C
310
mW
T
stg
St orage Temperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
SOT-23
Type
Marking
SO 642
N91
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THERMAL DATA
R
t hj-am b
R
th j-SR
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Substrat e
Max
450
320
o
C/W
o
C/W
Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= 200 V
100
nA
V
( BR)CBO
Collect or-Emitter
Breakdown Volt age
(I
E
= 0)
I
C
= 100
A
300
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= 1 mA
300
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= 100
A
6
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 20 mA
I
B
= 2 mA
0.5
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 20 mA
I
B
= 2 mA
0.9
V
h
FE
DC Current G ain
I
C
= 1 mA
V
CE
= 10 V
I
C
= 10 mA
V
CE
= 10 V
I
C
= 30 mA
V
CE
= 10 V
25
40
40
f
T
Transit ion F requency
I
C
= 10 mA V
CE
= 20 V f = 50 MHz
50
MHz
C
CB
Collect or Base
Capacitance
V
CE
= 20 V
f = 1MHz
3
pF
Pulsed: Pulse duration = 300
s, duty cycle
2 %
SO642
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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.
SO642
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