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Электронный компонент: ST2310DHI

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ST2310DHI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
NEW SERIES, ENHANCED PERFORMANCE
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s
INTEGRATED FREE WHEELING DIODE
s
HIGH VOLTAGE CAPABILITY (> 1500 V)
s
HIGH SWITCHING SPEED
s
TIGTHER hfe CONTROL
s
IMPROVED RUGGEDNESS
APPLICATIONS:
s
HORIZONTAL DEFLECTION HIGH END TVS
DESCRIPTION
The device is manufactured using Diffused
Collector technology for more stable operation Vs
base drive circuit variations resulting in very low
worst case dissipation.
INTERNAL SCHEMATIC DIAGRAM
April 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
600
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
12
A
I
CM
Collector Peak Current (t
p
< 5 ms)
25
A
I
B
Base Current
7
A
P
tot
Total Dissipation at T
c
= 25
o
C
55
W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
2500
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
ISOWATT218
R
BE
=32
Typ.
1/6
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V T
J
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V
70
210
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 800 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 7 A I
B
= 1.75 A
3
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 7 A I
B
= 1.75 A
1.1
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 5 V
I
C
= 7 A V
CE
= 1 V
I
C
= 7 A V
CE
= 5 V
5.5
15
5
8.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 5 A f = 32 KHz
I
B(o n)
= 0.9 A V
BE(off)
= -2.5 V
L
BB(off)
= 1.9
H (see figure 1)
2
0.25
2.5
0.5
s
s
V
f
Diode Forward Voltage
I
C
= 7 A
1.5
2.2
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
ST2310DHI
2/6
Derating Curve
Collector Emitter Saturation Voltage
DC Current Gain
Output Characteristics
Base Emitter Saturation Voltage
DC Current Gain
ST2310DHI
3/6
Power Losses
Switching Time Inductive Load
Reverse Biased SOA
Figure 1: Inductive Load Switching Test Circuit.
ST2310DHI
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
0.75
0.95
0.030
0.037
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
F5
1.10
0.043
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/B
ISOWATT218 NARROW LEADS MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
ST2310DHI
5/6