1/11
February 2003
.
STB100NF03L-03 STP100NF03L-03
STB100NF03L-03-1
N-CHANNEL 30V - 0.0026
-100A DPAK/IPAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0026
s
LOW THRESHOLD DRIVE
s
100% AVALANCHE TESTED
s
LOGIC LEVEL DEVICE
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB100NF03L-03
STP100NF03L-03
STB100NF03L-03-01
30 V
30 V
30 V
<0.0032
<0.0032
<0.0032
100 A
100 A
100 A
1
2
3
1
3
D
2
PAK
TO-263
(Suffix "T4")
TO-220
1
2
3
I
2
PAK
TO-262
(Suffix "-1")
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area
(1) Current Limited by Package
(2) Starting T
j
= 25
o
C, I
AR
= 50A, V
DD
= 50V
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D(1)
Drain Current (continuous) at T
C
= 25C
100
A
I
D(1)
Drain Current (continuous) at T
C
= 100C
100
A
I
DM
(
)
Drain Current (pulsed)
400
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
E
AS(2)
Single Pulse Avalanche Energy
1.9
J
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 50 A
V
GS
= 4.5 V
I
D
= 50 A
0.0026
0.0032
0.0032
0.0045
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(*)
Forward Transconductance
V
DS
>I
D(on)
xR
DS(on)max
I
D
=10 A
10
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz V
GS
= 0
6200
1720
300
pF
pF
pF
3/11
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 50 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
35
315
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V I
D
= 100A V
GS
= 5V
88
22.5
36
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 20 V
I
D
= 50 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
115
95
ns
ns
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 24 V
I
D
= 100 A
R
G
= 4.7
V
GS
= 4.5 V
(Inductive Load, Figure 5)
110
55
100
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
100
400
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 100 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 100 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
75
150
4
ns
nC
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
4/11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature
.
.
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