1/11
September 2003
STB100NH02L
N-CHANNEL 24V - 0.0052
- 60A DPAK
STripFETTM III POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0052
@ 10 V
s
TYPICAL R
DS
(on) = 0.007
@ 5 V
s
R
DS(ON)
* Qg INDUSTRY's BENCHMARK
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
LOW THRESHOLD DEVICE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
The STB100NH02L utilizes the latest advanced design
rules of ST's proprietary STripFETTM technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STB100NH02L
24 V
< 0.006
60 A
(2)
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB100NH02LT4
B100NH02L
TO-263
TAPE & REEL
1
3
D
PAK
TO-263
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
spike(1)
Drain-source Voltage Rating
30
V
V
DS
Drain-source Voltage (V
GS
= 0)
24
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
24
V
V
GS
Gate- source Voltage
20
V
I
D(2)
Drain Current (continuous) at T
C
= 25C
60
A
I
D(2)
Drain Current (continuous) at T
C
= 100C
60
A
I
DM(3)
Drain Current (pulsed)
240
A
P
tot
Total Dissipation at T
C
= 25C
100
W
Derating Factor
0.67
W/C
E
AS (4)
Single Pulse Avalanche Energy
600
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB100NH02L
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(5)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 25 mA, V
GS
= 0
24
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
1.8
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 30 A
V
GS
= 5 V
I
D
= 15 A
0.0052
0.007
0.006
0.011
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (5)
Forward Transconductance
V
DS
= 10 V
I
D
= 30 A
40
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz V
GS
= 0
2850
800
120
pF
pF
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level =20 mV
Open Drain
1
3/11
STB100NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
f
< t
fmax
.
(5)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
2
) Value limited by wire bonding
(6)
Q
oss =
C
oss
*
V
in ,
C
oss =
C
gd +
C
ds .
See Appendix A
(3)
Pulse width limited by safe operating area.
(7)
Gate charge for synchronous operation
(
4
) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 15V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
I
D
=30 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
13
75
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=10 V I
D
=60 A V
GS
=10 V
47.5
10
7
64
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
I
D
= 30 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
50
18
24.3
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(5)
Forward On Voltage
I
SD
= 30 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
di/dt = 100A/s
V
DD
= 16 V
T
j
= 150C
(see test circuit, Figure 5)
35
35
2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB100NH02L
4/11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/11
STB100NH02L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
PDF 
ZIP