STB10NB20
N - CHANNEL 200V - 0.30
- 10A - D
2
PAK
PowerMESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 0.30
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
TM
process, STMicroelectronis has designed an
advanced family
of
power MOSFETs with
outstanding performances. The
new
patent
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1998
1
3
D
2
PAK
TO-263
(suffix "T4")
TYPE
V
DSS
R
DS(on)
I
D
ST B10NB20
200 V
< 0.40
10 A
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
200
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
200
V
V
GS
G ate-source Volt age
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
10
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
6
A
I
DM
(
)
Drain Current (pulsed)
40
A
P
tot
T otal Dissipation at T
c
= 25
o
C
85
W
Derating Factor
0.68
W /
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
V/ns
T
s tg
Storage T emperature
-65 to 150
o
C
T
j
Max. O perat ing Junct ion T emperature
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
10A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
1/8
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1.47
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
10
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
150
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
200
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 5 A
0.30
0.40
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
10
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=5 A
3
4
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
470
135
22
650
190
30
pF
pF
pF
STB10NB20
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 100 V
I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, f igure 3)
10
15
14
20
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 160 V
I
D
= 10 A V
GS
= 10 V
17
7.5
5.5
24
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 160 V
I
D
= 10 A
R
G
= 4.7
V
G S
= 10 V
(see t est circuit, f igure 5)
8
10
20
11
14
28
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
10
40
A
A
V
SD
(
)
Forward On Voltage
I
SD
=10 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=10 A
di/ dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
170
980
11.5
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB10NB20
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB10NB20
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB10NB20
5/8
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