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Электронный компонент: STB16PF06LT4

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1/10
September 2004
STB16PF06L
P-CHANNEL 60V - 0.11
- 16A D2PAK
STripFETTM MOSFET
Table 1: General Features
s
TYPICAL R
DS
(on) = 0.11
s
LOW THRESHOLD DEVICE
s
LOW GATE CHARGE
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL
s
DC-DC CONVERTERS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
I
D
Pw
STB16PF06L
60 V
< 0.125
16 A
70 W
D
2
PAK
1
3
TO-263
PART NUMBER
MARKING
PACKAGE
PACKAGING
STB16PF06LT4
B16PF06L
D
2
PAK
TAPE & REEL
Rev. 1
STB16PF06L
2/10
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
SD
16A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(2) Starting T
j
= 25C , I
D
= 8 A , V
DD
= 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Table 4: Thermal Data
(#) When Mounted on 1 inch
2
FR-4 board, 2 oz of Cu
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
16
A
I
D
Drain Current (continuous) at T
C
= 100C
11.4
A
I
DM
( )
Drain Current (pulsed)
64
A
P
TOT
Total Dissipation at T
C
= 25C
70
W
Derating Factor
0.4
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
20
V/ns
E
AS
(2)
Single Pulse Avalanche Energy
250
mJ
T
j
T
stg
Operating Junction Temperature
Storage Temperature
- 55 to 175
C
Rthj-case
Thermal Resistance Junction-case Max
2.14
C/W
Rthj-PCB(#)
Thermal Resistance Junction-PCB Max
34
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose (1.6 mm frrom case, for 10sec)
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250A, V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100A
1.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 8 A
V
GS
= 5V, I
D
= 8 A
0.11
0.130
0.125
0.165
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STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Table 7: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
= 10 V
,
I
D
= 3 A
7.2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
630
121
49
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 30 V, I
D
= 8 A, R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load , Figure 1)
129
90
25.5
19.5
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 48 V, I
D
= 16 A,
V
GS
= 4.5V
(See test circuit, Figure 2)
11.4
5.2
4.7
15.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 8 A, V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 16 A, di/dt = 100A/s
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 3)
48.5
87.3
3.6
ns
nC
A
STB16PF06L
4/10
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance
5/10
STB16PF06L
Figure 9: Gate Charge vs Gate-source Voltage
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 11: Dource-Drain Diode Forward Char-
acteristics
Figure 12: Capacitance Variations
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 14: Normalized Breakdown Voltage vs
Temperature