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AUTOMOTIVE SPECIFIC
October 2002
STP200NF03
STB200NF03 STB200NF03-1
N-CHANNEL 30V - 0.0032
- 120A D
PAK/I
PAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0032
s
STANDARD THRESHOLD DRIVE
s
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
DC-DC & DC-AC CONVERTERS
s
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB200NF03/-1
STP200NF03
30 V
30 V
<0.0036
<0.0036
120 A
(**)
120 A
(**)
1
2
3
1
3
1
2
3
TO-220
D
PAK
TO-263
I
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
120A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 25 V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB200NF03T4
B200NF03
D
2
PAK
TAPE & REEL
STP200NF03
P200NF03
TO-220
TUBE
STB200NF03-1
B200NF03
I
2
PAK
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
(**)
Drain Current (continuous) at T
C
= 25C
120
A
I
D
Drain Current (continuous) at T
C
= 100C
120
A
I
DM
(
)
Drain Current (pulsed)
480
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2.0
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
1.5
V/ns
E
AS (2)
Single Pulse Avalanche Energy
1.45
J
T
stg
Storage Temperature
-55 to 175
C
T
j
Operating Junction Temperature
STB200NF03/-1 STP200NF03
2/14
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
Rthj-pcb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-pcb
Maximum Lead Temperature For Soldering Purpose
(for 10 sec. 1.6 mm from case)
Max
Max
Max
Typ
0.5
62.5
see curve on page 6
300
C/W
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
2
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 60 A
0.0032
0.0036
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
15 V
I
D
= 60 A
200
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4950
1750
280
pF
pF
pF
3/14
STB200NF03/-1 STP200NF03
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 60 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
30
195
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24V I
D
= 120A V
GS
= 10V
113
32
41
140
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 60 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
75
60
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
120
480
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 120 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 120 A
di/dt = 100A/s
V
DD
= 25 V
T
j
= 150C
(see test circuit, Figure 5)
70
170
5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB200NF03/-1 STP200NF03
4/14
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/14
STB200NF03/-1 STP200NF03
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
Power Derating vs Tc
Max Id Current vs Tc
.
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