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March 2004
STB20NM60A-1
STP20NM60A - STF20NM60A
N-CHANNEL 650V@Tj
max
- 0.25
- 20A IPAK/TO-220/TO-220FP
MDmeshTM MOSFET
1
2
3
1
2
3
TO-220
TO-220FP
IPAK
1
2
3
s
TYPICAL R
DS
(on) = 0.25
s
HIGH dv/dt
s
LOW INPUT CAPACITANCE AND GATE CHARGE
s
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company's PowerMESHTM horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company's propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition's products.
APPLICATIONS
s
SPECIFICALLY DESIGNED FOR ADAPTORS IN
QUASI-RESONANT CONFIGURATION
ORDER CODES
TYPE
V
DSS
@Tj
max
R
DS(on)
I
D
STB20NM60A-1
STP20NM60A
STF20NM60A
650 V
650 V
650 V
< 0.29
< 0.29
< 0.29
20 A
20 A
20 A
PART NUMBER
MARKING
PACKAGE
PACKAGING
STB20NM60A-1
B20NM60A
I
2
PAK
TUBE
STP20NM60A
P20NM60A
TO-220
TUBE
STF20NM60A
F20NM60A
TO-220FP
TUBE
INTERNAL SCHEMATIC DIAGRAM
STB20NM60A-1/STP20NM60A/STF20NM60A
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ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area
(1) I
SD
20A, di/dt
400 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
STB20NM60A-1
STP20NM60A
STF20NM60A
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
20
20(*)
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
12.6(*)
A
I
DM
( )
Drain Current (pulsed)
80
80(*)
A
P
TOT
Total Dissipation at T
C
= 25C
192
45
W
Derating Factor
1.2
0.36
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
V
T
stg
Storage Temperature
55 to 150
C
T
j
Max. Operating Junction Temperature
I
2
PAK/TO-220
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
0.65
2.8
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 10A
0.25
0.29
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STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 10A
11
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1630
pF
C
oss
Output Capacitance
350
pF
C
rss
Reverse Transfer
Capacitance
33
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
150
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 300V, I
D
= 10 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
20
ns
t
r
Rise Time
16
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 20A,
V
GS
= 10V
45
60
nC
Q
gs
Gate-Source Charge
8.2
nC
Q
gd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
Turn-off Delay Time
V
DD
= 300V, I
D
= 20 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
46
ns
t
f
Fall Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
20
A
I
SDM
(2)
Source-drain Current (pulsed)
80
A
V
SD
(1)
Forward On Voltage
I
SD
= 20 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s,
V
DD
= 50 V, T
j
= 25C
(see test circuit, Figure 5)
432
5.1
23.6
ns
C
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 20 A, di/dt = 100A/s,
V
DD
= 50 V, T
j
= 150C
(see test circuit, Figure 5)
595
7.3
24.8
ns
C
A
STB20NM60A-1/STP20NM60A/STF20NM60A
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Transfer Characteristics
Output Characteristics
Thermal Impedance for TO-220/I2PAK
Safe Operating Area for TO-220/I2PAK
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
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STB20NM60A-1/STP20NM60A/STF20NM60A
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Transconductance
Static Drain-Source On Resistance
Normalized Gate Thereshold Voltage vs Temp.
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