1/11
September 2003
STB70NH03L
N-CHANNEL 30V - 0.0075
- 60A D
2
PAK
STripFETTM III POWER MOSFET FOR DC-DC CONVERSION
s
TYPICAL R
DS
(on) = 0.0075
@ 10V
s
TYPICAL R
DS
(on) = 0.009
@ 5 V
s
R
DS(ON)
* Qg INDUSTRY's BENCHMARK
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
LOW THRESHOLD DEVICE
s
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
The STB70NH03L utilizes the latest advanced design
rules of ST's proprietary STripFETTM technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
Ordering Information
s
TYPE
V
DSS
R
DS(on)
I
D
STB70NH03L
30 V
<0.009
60 A(1)
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB70NH03LT4
B70NH03L
TO-263
TAPE & REEL
1
3
D
2
PAK
TO-263
(Suffix "T4")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
(1)
Drain Current (continuous) at T
C
= 25C
60
A
I
D
(1)
Drain Current (continuous) at T
C
= 100C
43
A
I
DM
(
2
)
Drain Current (pulsed)
240
A
P
tot
Total Dissipation at T
C
= 25C
85
W
Derating Factor
1
W/C
E
AS
(1)
Single Pulse Avalanche Energy
300
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB70NH03L
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.87
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250
A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 30 A
V
GS
= 5 V
I
D
= 30 A
0.0075
0.009
0.009
0.017
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(*)
Forward Transconductance
V
DS
= 10 V
I
D
= 18 A
25
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 10V f = 1 MHz V
GS
= 0
2200
380
49
pF
pF
pF
R
G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.5
3/11
STB70NH03L
Thermal Impedance
SWITCHING ON
(*)
SWITCHING OFF
(*)
SOURCE DRAIN DIODE
(*)
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(1)
Value limited by wire bonding
(2)
Pulse width limited by safe operating area
(
3
) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 20V
(4)
Gate charge for synchronous operation
.
See Appendix A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 30 A
R
G
= 4.7
V
GS
= 5 V
(Resistive Load, Figure 3)
21
95
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V I
D
=60A V
GS
=5V
15.7
8.3
3.4
21
nC
nC
nC
Q
gls
(4)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
15
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 30 A
R
G
= 4.7
,
V
GS
= 5 V
19
15
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
60
240
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 30 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
32
51
3.2
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
STB70NH03L
4/11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/11
STB70NH03L
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature
.
.
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