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January, 22 2002
STB7101
0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER
SOT323-6L (SC70)
ORDER CODE
STB7101
BRANDING
101
1
2
3
6
5
4
(Bottom View)
6
5
4
1
2
3
1
0
1
(Top View)
PIN CONNECTION
Pin No.
Pin Name
1
GND
2
GND
3
INPUT
4
VCC
5
GND
6
OUTPUT
OPERATING FREQUENCY 900-1900MHz
OUTPUT POWER 9.8dBm typ. @ 900MHz
7.5dBm typ. @ 1900MHz
POWER GAIN G
P
= 20.3dB typ. @ 900MHz
G
P
= 20.5dB typ. @ 1900MHz
APPLICATIONS
PA driver for cellular applications
DESCRIPTION
The STB7101, designed for cellular applications
(0.9/1.9GHz), uses a 20 GHz F
T
silicon bipolar
process. This IC is a wide range amplifier operating
from 900MHz to
1900MHz, in the overall
frequencies range the gain flatness is less than 1
dB. The STB7101 is housed in a very small SMD
package SOT323-6L.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions Value
Unit
V
cc
Supply voltage
T
a
= +25
o
C, pin 4 and 6
4.5
V
T
stg
Storage temperature
-55 to +150
o
C
T
a
Operating ambient temperature
-40 to +85
o
C
P
in
Input power
T
a
= +25
o
C
10
dBm
STB7101
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ELECTRICAL CHARACTERISTICS (T
a
= +25
o
C, V
cc
= 2.75V, Z
L
= Z
s
= 50
,
unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
cc
Supply voltage
2.6
2.75
3.3
V
I
cc
Circuit current
No signal
28
mA
G
p
Power Gain
f = 0.9GHz
f = 1.9GHz
20.3
20.5
dB
NF
Noise figure
f = 0.9GHz
f = 1.9GHz
5
4.5
dB
P
1dB
Output 1dB Compr.
Power
f = 0.9GHz
f = 1.9GHz
9.8
7.5
dBm
RL
IN
Input return loss
f = 0.9GHz
f = 1.9GHz
8
6.2
dB
RL
OUT
Output Return loss
f = 0.9GHz
f = 1.9GHz
9.7
9.7
dB
S
12
Isolation
f = 0.9GHz
f = 1.9GHz
-34
-33
dB
P
o
(Sat)
Saturated output power
level
f = 0.9GHz
f = 1.9GHz
11.3
9.7
dBm
OIP3
Output Third Order
Intercept
f = 0.9GHz
f = 1.9GHz
16.5
14.9
dBm
TYPICAL EVALUATION CIRCUIT
Evaluation circuit components
C1 = C2 = C3 = 27pF
C4 = 10nF
L1 = 15nH
L2 = 33nH
GND
3
GND
2
INPUT
1
Vcc
6
GND
5
OUTPUT
4
U1
STB7101
C1
27p
J1
RF IN
L1
15n
C2
27p
J2
RF OUT
L2
33 n
C3
27p
C4
10n
VCC (+2.75V)
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STB7101
Insertion Power Gain versus Frequency
800
1000
1200
1400
1600
1800
2000
Frequency (MHz)
6
8
10
12
14
16
18
20
22
24
In
s
e
r
t
i
o
n
P
o
w
e
r G
a
in
(
d
B
)
Noise Figure versus Frequency
800
1000
1200
1400
1600
1800
2000
Frequency (MHz)
3
4
5
6
7
NF (
d
B)
Power Gain versus Output Power @ 1900 MHz
-10
-8
-6
-4
-2
0
2
4
6
8
10
0
Output Power (dBm)
6
8
10
12
14
16
18
20
22
24
P
o
we
r
Ga
in (
d
B
)
Isolation versus Frequency
800
1000
1200
1400
1600
1800
2000
Frequency (MHz)
-50
-40
-30
-20
-10
0
Is
ola
t
ion (
dB)
Circuit Current versus Supply Voltage
0
0.5
1
1.5
2
2.5
3
3.5
0
Vcc (V)
-5
0
5
10
15
20
25
30
35
40
I
cc (mA
)
Power Gain versus Output Power @ 900 MHz
-10 -8
-6
-4
-2
0
2
4
6
8
10
12
0
Output Power (dBm)
6
8
10
12
14
16
18
20
22
24
P
o
w
e
r
G
ain
(
d
B
)
TYPICAL PERFORMANCE (T
a
= +25
o
C, Vcc = 2.75V, unless otherwise specified)
STB7101
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SOT323-6L MECHANICAL DATA
mm
Inch
MIN.
TYP.
MAX
MIN.
TYP.
MAX
A
0.8
1.1
0.031
0.043
A1
0
0.1
0
0.004
A2
0.8
1
0.0031
0.039
b
0.15
0.3
0.006
0.012
c
0.1
0.18
0.004
0.007
D
1.8
2.2
0.071
0.088
E
1.15
1.35
0.045
0.59
e
0.65
0.025
H
1.8
2.4
0.071
0.094
Q
0.1
0.4
0.004
0.016
DIM.
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STB7101
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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