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February 2003
STB80NE03L-06
STB80NE03L-06-1
N-CHANNEL 30V - 0.005
- 80A D
2
PAK / I
2
PAK
STripFETTM POWER MOSFET
(1) I
SD
804A, di/dt
300A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
s
TYPICAL R
DS
(on) = 0.005
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOW GATE CHARGE 100C
s
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
SizeTM" strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL,AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB80NE03L-06
STB80NE03L-06-1
30 V
30 V
< 0.006
< 0.006
80 A
80 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuos) at T
C
= 25C
80
A
I
D
Drain Current (continuos) at T
C
= 100C
60
A
I
DM
( )
Drain Current (pulsed)
320
A
P
TOT
Total Dissipation at T
C
= 25C
150
W
Derating Factor
1
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
T
stg
Storage Temperature
55 to 175
C
T
j
Max. Operating Junction Temperature
D
2
PAK
1
3
1
2
3
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STB80NE03L-06 / STB80NE03L-06-1
2/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
80
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 15 V)
600
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 40 A
0.005
0.006
V
GS
= 4.5 V, I
D
= 40 A
0.008
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 40 A
30
50
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
6500
pF
C
oss
Output Capacitance
1500
pF
C
rss
Reverse Transfer
Capacitance
500
pF
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STB80NE03L-06 / STB80NE03L-06-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 40 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
40
55
ns
t
r
Rise Time
260
350
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V, I
D
= 80A,
V
GS
= 5V
95
30
44
130
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V, I
D
= 80 A,
R
G
= 4.7
,
V
GS
= 5V
(see test circuit, Figure 3)
70
165
250
95
220
340
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
80
A
I
SDM
(2)
Source-drain Current (pulsed)
320
A
V
SD
(1)
Forward On Voltage
I
SD
= 80 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A, di/dt = 100A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 5)
75
0.14
4
ns
nC
A
Safe Operating Area
Thermal Impedence
STB80NE03L-06 / STB80NE03L-06-1
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Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Output Characteristics
Transfer Characteristics
Capacitance Variations
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STB80NE03L-06 / STB80NE03L-06-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
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