1/11
February 2003
.
STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035
- 80A D
2
PAK/I
2
PAK/TO-220
STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.0035
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TYPE
V
DSS
R
DS(on)
I
D
STB80NF03L-04/-1
STP80NF03L-04
30 V
30 V
<0.004
<0.004
80 A
80 A
1
2
3
1
3
1
2
3
TO-220
D
2
PAK
TO-263
I
2
PAK
TO-262
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) I
SD
80A, di/dt
240A/s, V
DD
24V, T
j
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 20V
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB80NF03L-04
80NF03L-04 @
D
2
PAK
TUBE
STB80NF03L-04T4
80NF03L-04 @
D
2
PAK
TAPE & REEL
STP80NF03L-04
80NF03L-04 @
TO-220
TUBE
STB80NF03L-04-1
80NF03L-04 @
I
2
PAK
TUBE
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
(**)
Drain Current (continuous) at T
C
= 25C
80
A
I
D
(**)
Drain Current (continuous) at T
C
= 100C
80
A
I
DM
(
)
Drain Current (pulsed)
320
A
P
tot
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt
(1)
Peak Diode Recovery voltage slope
2
V/ns
E
AS (2)
Single Pulse Avalanche Energy
2.3
J
T
stg
Storage Temperature
-60 to 175
C
T
j
Max. Operating Junction Temperature
175
C
STB80NF03L-04/-1/STP80NF03L-04
2/11
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
0.5
62.5
300
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A
V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 40 A
V
GS
= 4.5 V
I
D
= 40 A
0.0035
0.004
0.004
0.0055
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS =
15 V
I
D
= 15 A
50
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
5500
1670
290
pF
pF
pF
3/11
STB80NF03L-04/-1/STP80NF03L-04
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
I
D
= 40 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
30
270
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=24V I
D
=80 A V
GS
=4.5V
85
23
40
110
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
I
D
= 40 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
110
95
ns
ns
t
r(Voff)
t
f
t
c
Off-Voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 24 V
I
D
= 80 A
R
G
= 4.7
V
GS
= 4.5 V
(Inductive Load, Figure 5)
125
75
125
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
di/dt = 100A/s
V
DD
= 20 V
T
j
= 150C
(see test circuit, Figure 5)
75
0.15
4
ns
C
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STB80NF03L-04/-1/STP80NF03L-04
4/11
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/11
STB80NF03L-04/-1/STP80NF03L-04
.
.
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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