1/9
PRELIMINARY DATA
September 2003
STP80NF55L-08
STB80NF55L-08 - STB80NF55L-08-1
N-CHANNEL 55V - 0.0065
- 80A - TO-220/D
2
PAK/I
2
PAK
STripFETTM II POWER MOSFET
(1) Current Limited by Package
(2) I
SD
80A, di/dt
500A/s, V
DD
= 40V T
j
T
JMAX.
(3) Starting T
j
= 25C, I
D
= 40A, V
DD
= 40V
s
TYPICAL R
DS
(on) = 0.0065
s
LOW THRESHOLD DRIVE
s
LOGIC LEVEL DEVICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM"
strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP80NF55L-08
STB80NF55L-08
STB80NF55L-08-1
55 V
55 V
55 V
0.008
0.008
0.008
80 A
80 A
80 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
55
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
55
V
V
GS
Gate- source Voltage
16
V
I
D
(1)
Drain Current (continuous) at T
C
= 25C
80
A
I
D
(1)
Drain Current (continuous) at T
C
= 100C
80
A
I
DM
( )
Drain Current (pulsed)
320
A
P
TOT
Total Dissipation at T
C
= 25C
300
W
Derating Factor
2
W/C
dv/dt (2)
Peak Diode Recovery voltage slope
15
V/ns
E
AS
(3)
Single Pulse Avalanche Energy
870
mJ
T
stg
Storage Temperature
55 to 175
C
T
j
Max. Operating Junction Temperature
175
C
TO-220
1
2
3
1
3
D
2
PAK
1
2
3
I
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
55
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
1.6
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 40 A
V
GS
= 5 V, I
D
= 40 A
0.0065
0.008
0.008
0.01
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
=15V
,
I
D
=40 A
150
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4350
pF
C
oss
Output Capacitance
800
pF
C
rss
Reverse Transfer
Capacitance
260
pF
3/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 4.5V
(see test circuit, Figure 3)
35
ns
t
r
Rise Time
145
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 27.5 V, I
D
= 80A,
V
GS
= 4.5V
75
20
30
100
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 4.5V
(see test circuit, Figure 3)
85
65
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
80
A
I
SDM
(2)
Source-drain Current (pulsed)
320
A
V
SD
(2)
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/s,
V
DD
= 20V, T
j
= 150C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
4/9
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/9
STP80NF55L-08 - STB80NF55L-08 - STB80NF55L-08-1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
P
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
TO-220 MECHANICAL DATA
PDF 
ZIP