STB8NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
n
TYPICAL R
DS(on)
= 0.7
n
30V GATE TO SOURCE VOLTAGE RATING
n
100% AVALANCHE TESTED
n
REPETITIVE AVALANCHE DATA AT 100
o
C
n
LOW INTRINSIC CAPACITANCES
n
GATE CHARGE MINIMIZED
n
REDUCED THRESHOLD VOLTAGE SPREAD
n
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
n
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DG R
Drain- gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gat e-source Voltage
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
8
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
5. 3
A
I
DM
(
)
Drain Current (pulsed)
32
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
125
W
Derating Fact or
1
W/
o
C
T
s tg
Storage Temperat ure
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on )
I
D
STB8NA50
500 V
< 0.85
8 A
October 1995
1 2
3
1
3
I2PAK
TO-262
D2PAK
TO-263
1/10
THERMAL DATA
R
thj -ca se
R
thj- amb
R
thc-sin k
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
I
AR
Avalanche Current, Repet itive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
8
A
E
AS
Single Pulse Avalanche Energy
(st arting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
350
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
< 1%)
11
mJ
I
AR
Avalanche Current, Repet itive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
< 1%)
5.3
A
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
500
V
I
DSS
Zero G ate Volt age
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
T
c
= 125
o
C
250
1000
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
V
GS( th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS( on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 4 A
V
GS
= 10V
I
D
= 4 A
T
c
= 100
o
C
0. 7
0.85
1.7
I
D(on )
On Stat e Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
8
A
DYNAMIC
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 4 A
4.5
6. 5
S
C
is s
C
o ss
C
r ss
Input Capacit ance
Out put Capacitance
Reverse T ransf er
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1200
190
55
1600
250
75
pF
pF
pF
STB8NA50
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 4 A
R
G
= 4.7
V
G S
= 10 V
(see test circuit, figure 3)
18
25
25
35
ns
ns
(di/ dt)
on
Turn-on Current Slope
V
DD
= 400 V
I
D
= 8 A
R
G
= 47
V
GS
= 10 V
(see test circuit, f igure 5)
220
A/
s
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 400 V
I
D
= 8 A
V
GS
= 10 V
55
9
25
75
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
t
r( Voff )
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 8 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
15
15
25
22
22
35
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 8 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
500
6. 5
26
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limi ted by safe operating area
Safe Operating Area
Thermal Impedance
STB8NA50
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STB8NA50
4/10
Capacitance Variations
Normalized On Resistance vs Temperature
Turn-off Drain-source Voltage Slope
Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope
Cross-over Time
STB8NA50
5/10
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