STB9NB50
N - CHANNEL ENHANCEMENT MODE
Power MESH
TM
MOSFET
s
TYPICAL R
DS(on)
= 0.75
s
EXTREMELY HIGH dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
VERY LOW INTRINSIC CAPACITANCE
s
GATE CHARGE MINIMIZED
s
LOW LEAKAGE CURRENT
s
APPLICATION ORIENTED
CHARACTERIZATION
s
FOR SMD D
2
PAK VERSION CONTACT
SALES OFFICE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLY (SMPS)
s
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
March 1998
1 2
3
I
2
PAK
TO-262
(suffix "-1")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain- gate Voltage (R
G S
= 20 k
)
500
V
V
GS
Gate-source Voltage
30
V
I
D
Drain Current (cont inuous) at T
c
= 25
o
C
8.6
A
I
D
Drain Current (cont inuous) at T
c
= 100
o
C
5.4
A
I
DM
(
)
Drain Current (pulsed)
34. 4
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
125
W
Derating Fact or
1.0
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4.5
V/ ns
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperat ure
150
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
9A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, Tj
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
ST B9NB50
500 V
< 0.85
8.6 A
1/8
THERMAL DATA
R
t hj-ca se
R
t hj- amb
R
t hj- amb
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
8.6
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
520
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
500
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
30 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
3
4
5
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10 V
I
D
= 4.3 A
0. 75
0.85
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
8. 6
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
= 4.3 A
4. 5
5.7
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1250
175
20
1625
236
27
pF
pF
pF
STB9NB50
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
I
D
= 4.3 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 3)
19
11
30
15
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V
I
D
= 8.6 A
V
G S
= 10 V
32
10. 6
13. 7
45
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 400 V
I
D
= 8.6
A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, figure 5)
11. 5
11
20
17
16
28
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
8.6
34.4
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 8. 6 A
V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8.6 A
di/dt = 100 A/
s
V
R
= 100 V
T
j
= 150
o
C
(see test circuit, figure 5)
420
3.5
16. 5
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB9NB50
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STB9NB50
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STB9NB50
5/8
PDF 
ZIP