1/13
June 2002
STP9NK60Z - STP9NK60ZFP
STB9NK60Z - STB9NK60Z-1
N-CHANNEL 600V - 0.85
- 7A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected SuperMESHTMPower MOSFET
s
TYPICAL R
DS
(on) = 0.85
s
EXTREMELY HIGH dv/dt CAPABILITY
s
IMPROVED ESD CAPABILITY
s
100% AVALANCHE RATED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60Z-1
600 V
600 V
600 V
600 V
< 0.95
< 0.95
< 0.95
< 0.95
7 A
7 A
7 A
7 A
125 W
30 W
125 W
125 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP9NK60Z
P9NK60Z
TO-220
TUBE
STP9NK60ZFP
P9NK60ZFP
TO-220FP
TUBE
STB9NK60Z
B9NK60Z
D
2
PAK
TUBE
STB9NK60ZT4
B9NK60Z
D
2
PAK
TAPE & REEL
STB9NK60Z-1
B9NK60Z-1
I
2
PAK
TUBE
TO-220
TO-220FP
1
2
3
1
2
3
1
3
I
2
PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
(
l
) Pulse width limited by safe operating area
(1) I
SD
7A, di/dt
200
A, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
7
7 (*)
A
I
D
Drain Current (continuous) at T
C
= 100C
4.4
4.4 (*)
A
I
DM
(
l
)
Drain Current (pulsed)
28
28 (*)
A
P
TOT
Total Dissipation at T
C
= 25C
125
30
W
Derating Factor
1
0.24
W/C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2500
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
C
C
TO-220
I
2
PAK
D
2
PAK
TO-
220FP
Rthj-case
Thermal Resistance Junction-case Max
1
4.16
C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
235
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
3/13
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100A
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 3.5 A
0.85
0.95
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 3.5 A
5.3
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1110
135
30
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480 V
72
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
19
17
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, I
D
= 7 A,
V
GS
= 10V
38
7
21
53
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
43
15
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 300 V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
11
8
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
7
28
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 7 A, di/dt = 100A/s
V
DD
= 30V, T
j
= 150C
(see test circuit, Figure 5)
480
3.5
14.5
ns
C
A
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
4/13
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
5/13
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
Normalized On Resistance vs Temperature
Capacitance Variations
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transconductance
Normalized Gate Threshold Voltage vs Temp.
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