1/8
February 2003
.
STC5NF20V
N-CHANNEL 20V - 0.030
- 5A TSSOP8
2.7V-DRIVE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.030
@ 4.5 V
s
TYPICAL R
DS
(on) = 0.037
@ 2.7 V
s
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
TYPE
V
DSS
R
DS(on)
I
D
STC5NF20V
20 V
< 0.040
( @ 4.5 V )
< 0.045
( @ 2.7 V )
5 A
TSSOP8
ABSOLUTE MAXIMUM RATINGS
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
20
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
20
V
V
GS
Gate- source Voltage
12
V
I
D
Drain Current (continuous) at T
C
= 25C
5
A
I
D
Drain Current (continuous) at T
C
= 100C
3
A
I
DM
(
)
Drain Current (pulsed)
20
A
P
tot
Total Dissipation at T
C
= 25C
1.5
W
INTERNAL SCHEMATIC DIAGRAM
STC5NF20V
2/8
THERMAL DATA
(*)
When Mounted on FR-4 board with 1 inch
2
pad, 2 oz of Cu and t
[
10 sec
(**)
When Mounted on minimum recommended footprint
ELECTRICAL CHARACTERISTICS (T
case
= 25 C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-pcb
Rthj-pcb
T
j
T
stg
Thermal Resistance Junction-PCB (**)
Thermal Resistance Junction-PCB (*)
Operating Junction Temperature
Storage temperature
Max
Max
100
83.5
-55 to 150
-55 to 150
C/W
C/W
C
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
20
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 12V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
0.6
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V
I
D
= 2.5 A
V
GS
= 2.7 V
I
D
= 2.5 A
0.030
0.037
0.040
0.045
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (*)
Forward Transconductance
V
DS
=15 V
I
D
= 2.5 A
9.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz, V
GS
= 0
460
200
50
pF
pF
pF
3/8
STC5NF20V
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
I
D
= 2.5 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 1)
7
33
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 16V I
D
= 5A V
GS
=4.5V
(see test circuit, Figure 2)
8.5
1.8
2.4
11.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
I
D
= 2.5 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 1)
27
10
ns
ns
t
d(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 16 V
I
D
= 5 A
R
G
= 4.7
,
V
GS
= 4.5 V
(Inductive Load, Figure 3)
26
11
21
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 5 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A
di/dt = 100A/s
V
DD
= 10 V
T
j
= 150C
(see test circuit, Figure 3)
26
13
1
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance
STC5NF20V
4/8
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STC5NF20V
Normalized Gate Threshold Voltage vs Temperature
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Thermal resistance and max power
.
.
STC5NF20V
6/8
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive
Load
7/8
STC5NF20V
DIM.
mm.
inch.
MIN.
TYP. MAX.
MIN.
TYP. MAX.
A
1.05
1.20
0.041
0.047
A1
0.05
0.15
0.002
0.006
A2
0.80
1.05
0.032
0.041
b
0.19
0.30
0.008
0.012
c
0.090
0.20
0.003
0.007
D
2.90
3.10
0.114
0.122
E
6.20
6.60
0.240
0.260
E1
4.30
4.50
0.170
0.177
e
0.65
0.025
L
0.45
0.75
0.018
0.030
L1
1.00
0.039
k
0
o
8
o
0.192
0.208
TSSOP8 MECHANICAL DATA
STC5NF20V
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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