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Электронный компонент: STD12N10L

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STD12N10L
N - CHANNEL 100V - 0.12
- 12A TO-252
LOW THRESHOLD POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.12
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
s
LOW THRESHOLD DRIVE
s
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
November 1999
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Unit
V
DS
Drain-source Volt age (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
G S
Gat e-source Voltage
15
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
12
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
8
A
I
DM
(
)
Drain Current (pulsed)
48
A
P
tot
Tot al Dissipation at T
c
= 25
o
C
50
W
Derating F act or
0.33
W /
o
C
T
st g
Storage T emperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(o n)
I
D
STD12N10L
100 V
< 0.15
12 A
1
3
DPAK
TO-252
(Suffix "T4")
1/9
THERMAL DATA
R
thj -case
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
Maximum Lead Temperature F or Soldering Purpose
3
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
100
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
15 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.6
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 6 A
V
GS
= 5V
I
D
= 6 A
0.12
0.17
0.15
0. 2
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
12
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 6 A
6. 5
10
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
800
150
50
pF
pF
pF
STD12N10L
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 50 V
I
D
= 6 A
R
G
= 4.7
V
G S
= 5 V
(Resistive Load, see fig. 3)
15
40
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 80 V I
D
= 12 A V
GS
= 5 V
20
6
10
30
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 80 V
I
D
= 12 A
R
G
= 4.7
V
GS
= 5 V
(Induct ive Load, see fig. 5)
12
12
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
12
48
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 12 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 12 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
(see t est circuit, f ig. 5)
145
580
8
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STD12N10L
3/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STD12N10L
4/9
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
0.031
L4
0.6
1
0.023
0.039
==
D
L2
L4
13
==
B
E
==
B2
G
2
A
C2
C
H
A1
DETAIL "A"
A2
DETAIL "A"
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STD12N10L
5/9
Information furnished is believ ed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
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.
STD12N10L
6/9