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Электронный компонент: STD150NH02LT4

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PRELIMINARY DATA
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD150NH02L
N-CHANNEL 24V - 0.003
- 150A ClipPAKTM/IPAK
STripFETTM III POWER MOSFET
s
TYPICAL R
DS
(on) = 0.003
@ 10 V
s
TYPICAL R
DS
(on) = 0.005
@ 5 V
s
R
DS(ON)
* Qg INDUSTRY's BENCHMARK
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
LOW THRESHOLD DEVICE
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING POWER PACKAGE
IN TAPE & REEL (SUFFIX "T4")
DESCRIPTION
The STD150NH02L utilizes the latest advanced design
rules of ST's proprietary STripFETTM technology. This
novel 0.6
process utilizes also unique metallization
techniques that couple to a "bondless" assembly
technique result in outstanding performance with
standard DPAK outline. It is therefore ideal in high
performance DC-DC converter applications where
efficiency it to be achieved at very high out currents.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
TYPE
V
DSS
R
DS(on)
I
D
STD150NH02L
24 V
< 0.0035
150 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD150NH02LT4
D150NH02L
ClipPak
TAPE & REEL
STD150NH02L-1
D150NH02L
TO-251
TUBE
ClipPakTM
(Suffix "T4")
3
2
1
1
3
IPAK
TO-251
(Suffix "-1")
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
spike(1)
Drain-source Voltage Rating
30
V
V
DS
Drain-source Voltage (V
GS
= 0)
24
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
24
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
150
A
I
D
Drain Current (continuous) at T
C
= 100C
95
A
I
DM(2)
Drain Current (pulsed)
600
A
P
tot
Total Dissipation at T
C
= 25C
125
W
Derating Factor
0.83
W/C
E
AS (3)
Single Pulse Avalanche Energy
900
mJ
T
stg
Storage Temperature
-55 to 175
C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STD150NH02L
2/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(4)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1.2
100
275
C/W
C/W
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 25 mA, V
GS
= 0
24
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= 20 V
V
DS
= 20 V T
C
= 125C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
I
D
= 250 A
1
1.8
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 75 A
V
GS
= 5 V
I
D
= 75 A
0.003
0.005
0.0035
0.0065
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs (4)
Forward Transconductance
V
DS
= 10 V
I
D
= 40 A
52
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15V f = 1 MHz V
GS
= 0
4450
1126
141
pF
pF
pF
R
G
Gate Input Resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
1.6
3/9
STD150NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
f
< t
fmax
.
(4)
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(2)
Pulse width limited by safe operating area
(5)
Q
oss =
C
oss
*
V
in ,
C
oss =
C
gd +
C
ds .
See Appendix A
(
3
) Starting T
j
= 25
o
C, I
D
= 150A, V
DD
= 10V
(6)
Gate charge for synchronous operation
.
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
I
D
= 75 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load, Figure 3)
14
224
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 16V I
D
= 150A V
GS
= 10 V
69
13
9
93
nC
nC
nC
Q
oss(5)
Output Charge
V
DS
= 16 V V
GS
= 0 V
27
nC
Q
gls(6)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
64
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
I
D
= 75 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load, Figure 3)
69
40
54
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
150
600
A
A
V
SD
(4)
Forward On Voltage
I
SD
= 75 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 150 A
di/dt = 100A/s
V
DD
= 15 V
T
j
= 150C
(see test circuit, Figure 5)
47
58
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
STD150NH02L
4/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
5/9
STD150NH02L
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3 0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
0.033
B5
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E