STD16NE10
N - CHANNEL 100V - 0.07
- 16A - IPAK/DPAK
STripFET
TM
MOSFET
s
TYPICAL R
DS(on)
= 0.07
s
EXCEPTIONAL dv/dt CAPABILITY
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature Size
TM
"
strip-based
process.The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL (DISK DRIVERS,etc.)
s
DC-DC & DC-ACCONVERTERS
s
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V
DS
Drain-source Volt age (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
100
V
V
G S
Gat e-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
16
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
11
A
I
DM
(
)
Drain Current (pulsed)
64
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
50
W
Derating F act or
0.33
W/
o
C
dv/ dt(
1
)
Peak Diode Recovery voltage slope
7
V/ ns
T
stg
Storage T emperat ure
-65 to 175
o
C
T
j
Max. O perating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
16 A, di/dt
200 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
ST D16NE10
100 V
< 0.1
16 A
July 1998
3
2
1
IPAK
TO-251
(Suffix "-1")
1
3
DPAK
TO-252
(Suffix "T4")
1/9
THERMAL DATA
R
t hj-ca se
Rthj -am b
R
thc- si nk
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3.0
100
1.5
275
o
C/ W
oC/W
o
C/ W
o
C
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
I
AR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by T
j
max,
< 1%)
16
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 30 V)
75
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
(BR)DSS
Drain-source
Breakdown Volt age
I
D
= 250
A
V
GS
= 0
100
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
G S
=
20 V
100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
2
3
4
V
R
DS( on)
St atic Drain-source On
Resistance
V
G S
= 10V
I
D
= 8 A
0. 07
0.1
I
D(o n)
On St ate Drain Current
V
DS
> I
D(on)
x R
DS(on) max
V
G S
= 10 V
16
A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
g
fs
(
)
Forward
Transconduct ance
V
DS
> I
D(on)
x R
DS(on) max
I
D
=8 A
5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1600
180
50
2100
250
70
pF
pF
pF
STD16NE10
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 50 V
I
D
= 10 A
R
G
=4.7
V
GS
= 10 V
(see test circuit, figure 3)
17
37
23
50
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 80 V
I
D
= 20 A
V
GS
= 10 V
38
10
12
50
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
r(Vof f)
t
f
t
c
Of f-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 80 V
I
D
= 20 A
R
G
=4.7
V
GS
= 10 V
(see test circuit, figure 5)
11
18
32
15
25
44
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
16
64
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 16 A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 20 A
di/ dt = 100 A/
s
V
DD
= 50 V
T
j
= 150
o
C
(see test circuit, figure 5)
110
440
8
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD16NE10
3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD16NE10
4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD16NE10
5/9
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