STD17NE03L
N - CHANNEL 30V - 0.034
- 17A - DPAK/IPAK
STripFET
TM
POWER MOSFET
s
TYPICAL R
DS(on)
= 0.034
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Volt age (R
GS
= 20 k
)
30
V
V
GS
G ate-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
17
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
12
A
I
DM
(
)
Drain Current (pulsed)
68
A
P
tot
T otal Dissipation at T
c
= 25
o
C
35
W
Derating Factor
0.23
W /
o
C
dv/dt
Peak Diode Recovery volt age slope
6
V/ns
T
s tg
Storage Temperat ure
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
(
) Pulse width limited by safe operating area
(
1
) I
SD
17 A, di/dt
300 A/
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
STD17NE03L
30 V
< 0.05
17 A
June 1999
1
3
DPAK
TO-252
(Suffix "T4")
3
2
1
IPAK
TO-251
(Suffix "-1")
1/9
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
4.28
100
1. 5
275
o
C/W
oC/ W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
I
AR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by T
j
max)
17
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
50
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero G ate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V
G S(th)
Gat e Threshold
Voltage
V
DS
= V
GS
I
D
= 250
A
1
1.7
2. 5
V
R
DS(on)
Static Drain-source O n
Resist ance
V
GS
= 10V
I
D
= 8.5 A
V
GS
= 10V
I
D
= 8.5 A
0. 034
0. 049
0.05
0.06
I
D(o n)
On Stat e Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
17
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
g
f s
(
)
Forward
Transconduct ance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=8.5 A
5
11
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
680
160
60
pF
pF
pF
STD17NE03L
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
d(on)
t
r
Turn-on delay Time
Rise Time
V
DD
= 15 V
I
D
= 10 A
R
G
=4.7
V
GS
= 5 V
15
70
ns
ns
Q
g
Q
gs
Q
gd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V
I
D
= 22 A
V
GS
= 5 V
13
6
6
18
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V
I
D
= 20 A
R
G
=4.7
V
GS
= 5 V
13
33
55
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
17
68
A
A
V
SD
(
)
Forward On Volt age
I
SD
= 17 A
V
GS
= 0
1. 5
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 22 A
di/dt = 100 A/
s
V
DD
= 15 V
T
j
= 150
o
C
40
0.45
2.2
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STD17NE03L
3/9
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STD17NE03L
4/9
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STD17NE03L
5/9
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