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April 2004
STQ2HNK60ZR-AP
STF2HNK60Z - STD2HNK60Z-1
N-CHANNEL 600V - 4.4
- 2.0A TO-92/TO-220FP/IPAK
Zener-Protected SuperMESHTM MOSFET
TYPICAL R
DS
(on) = 4.4
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
ORDER CODES
TYPE
V
DSS
R
DS(on)
I
D
P
W
STQ2HNK60ZR-AP
STD2HNK60Z-1
STF2HNK60Z
600 V
600 V
600 V
< 4.8
< 4.8
< 4.8
0.5 A
2.0 A
2.0 A
3 W
45 W
20 W
PART NUMBER
MARKING
PACKAGE
PACKAGING
STD2HNK60Z-1
D2HNK60Z
IPAK
TUBE
STQ2HNK60ZR-AP
Q2HNK60ZR
TO-92
AMMOPAK
STF2HNK60Z
F2HNK60Z
TO-220FP
TUBE
TO-220FP
3
2
1
IPAK
TO-92 (Ammopack)
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
2 A, di/dt
200 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Current Limited by package
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
IPAK
TO-220FP
TO-92
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
2.0
2.0 (*)
0.5
A
I
D
Drain Current (continuous) at T
C
= 100C
1.26
1.26 (*)
0.32
A
I
DM
( )
Drain Current (pulsed)
8
8 (*)
2
A
P
TOT
Total Dissipation at T
C
= 25C
45
20
3
W
Derating Factor
0.36
0.16
0.025
W/C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
2000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
--
2500
--
V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
IPAK
TO-220FP
TO-92
Rthj-case
Thermal Resistance Junction-case Max
2.77
6.25
--
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
62.5
120
C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
--
40
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
300
260
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
120
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 50 A
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 1.0 A
4.4
4.8
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 1.0 A
1.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
280
38
7
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
30
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 300 V, I
D
= 1.0 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
10
30
23
50
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 2.0 A,
V
GS
= 10V
11
2.25
6
15
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
2.0
8.0
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 2.0 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 2.0 A, di/dt = 100 A/s
V
DD
= 20 V, T
j
= 25C
(see test circuit, Figure 5)
178
445
5
ns
nC
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 13 A, di/dt = 100 A/s
V
DD
= 20 V, T
j
= 150C
(see test circuit, Figure 5)
200
500
5
ns
nC
A
STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
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Thermal Impedance for IPAK
Thermal Impedance for TO-220FP
Thermal Impedance for TO-92
Safe Operating Area for TO-92
Safe Operating Area for TO-220FP
Safe Operating Area for IPAK
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STQ2HNK60ZR-AP - STF2HNK60Z - STD2HNK60Z-1
Capacitance Variations
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Transconductance
Output Characteristics
Static Drain-source On Resistance
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